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Title: Computational synthesis of single-layer GaN on refractory materials

Abstract

The synthesis of single-layer materials relies on suitable substrates. In this paper, we identify suitable substrates for the stabilization and growth of single-layer GaN and characterize the effect of the substrate on the electronic structure of single-layer GaN. We identify two classes of epitaxial substrates, refractory metal diborides and transition-metal dichalcogenides. We find that the refractory diborides provide epitaxial stabilization for the growth and functionalization of single layer GaN. We show that chemical interactions of single layer GaN with the diboride substrates result in n-type doping of the single-layer GaN. Transition-metal dichalcogenides, on the other hand, although epitaxially matched, cannot provide sufficient thermodynamic stabilization for the growth of single layer GaN. Nonetheless, energy band alignments of GaN/metal chalcogenides show that they make good candidates for heterostructures.

Authors:
;  [1]
  1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
Publication Date:
OSTI Identifier:
22314476
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; ELECTRONIC STRUCTURE; EPITAXY; GALLIUM NITRIDES; REFRACTORY METALS; SUBSTRATES; TRANSITION ELEMENTS

Citation Formats

Singh, Arunima K., and Hennig, Richard G., E-mail: rhennig@cornell.edu. Computational synthesis of single-layer GaN on refractory materials. United States: N. p., 2014. Web. doi:10.1063/1.4892351.
Singh, Arunima K., & Hennig, Richard G., E-mail: rhennig@cornell.edu. Computational synthesis of single-layer GaN on refractory materials. United States. doi:10.1063/1.4892351.
Singh, Arunima K., and Hennig, Richard G., E-mail: rhennig@cornell.edu. Mon . "Computational synthesis of single-layer GaN on refractory materials". United States. doi:10.1063/1.4892351.
@article{osti_22314476,
title = {Computational synthesis of single-layer GaN on refractory materials},
author = {Singh, Arunima K. and Hennig, Richard G., E-mail: rhennig@cornell.edu},
abstractNote = {The synthesis of single-layer materials relies on suitable substrates. In this paper, we identify suitable substrates for the stabilization and growth of single-layer GaN and characterize the effect of the substrate on the electronic structure of single-layer GaN. We identify two classes of epitaxial substrates, refractory metal diborides and transition-metal dichalcogenides. We find that the refractory diborides provide epitaxial stabilization for the growth and functionalization of single layer GaN. We show that chemical interactions of single layer GaN with the diboride substrates result in n-type doping of the single-layer GaN. Transition-metal dichalcogenides, on the other hand, although epitaxially matched, cannot provide sufficient thermodynamic stabilization for the growth of single layer GaN. Nonetheless, energy band alignments of GaN/metal chalcogenides show that they make good candidates for heterostructures.},
doi = {10.1063/1.4892351},
journal = {Applied Physics Letters},
number = 5,
volume = 105,
place = {United States},
year = {Mon Aug 04 00:00:00 EDT 2014},
month = {Mon Aug 04 00:00:00 EDT 2014}
}
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