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Title: Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

Abstract

Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10 nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10 nm regime.

Authors:
; ; ; ;  [1]
  1. Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009 (Australia)
Publication Date:
OSTI Identifier:
22314362
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; EQUIPMENT; HAMILTONIANS; INTERACTIONS; LENGTH; MATTER; METALS; MOSFET; OXIDES; PERFORMANCE; SEMICONDUCTOR MATERIALS; SIMULATION; SURFACES; SYMMETRY; THICKNESS; THIN FILMS; THREE-DIMENSIONAL CALCULATIONS; TOPOLOGY; WIDTH

Citation Formats

Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au, Jolley, G., Umana-Membreno, G. A., Antoszewski, J., and Faraone, L.. Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices. United States: N. p., 2014. Web. doi:10.1063/1.4894152.
Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au, Jolley, G., Umana-Membreno, G. A., Antoszewski, J., & Faraone, L.. Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices. United States. doi:10.1063/1.4894152.
Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au, Jolley, G., Umana-Membreno, G. A., Antoszewski, J., and Faraone, L.. Thu . "Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices". United States. doi:10.1063/1.4894152.
@article{osti_22314362,
title = {Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices},
author = {Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au and Jolley, G. and Umana-Membreno, G. A. and Antoszewski, J. and Faraone, L.},
abstractNote = {Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10 nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10 nm regime.},
doi = {10.1063/1.4894152},
journal = {Journal of Applied Physics},
number = 8,
volume = 116,
place = {United States},
year = {Thu Aug 28 00:00:00 EDT 2014},
month = {Thu Aug 28 00:00:00 EDT 2014}
}