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Title: Unipolar resistive switching behavior of amorphous YCrO{sub 3} films for nonvolatile memory applications

Abstract

Amorphous YCrO{sub 3} (YCO) films were prepared on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of ∼10{sup 5} between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space–charge limited conduction mechanisms, respectively.

Authors:
; ;  [1]
  1. Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, Puerto Rico 00936-8377 (United States)
Publication Date:
OSTI Identifier:
22314359
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; ENERGY BEAM DEPOSITION; EQUIPMENT; FILMS; LASER RADIATION; PULSED IRRADIATION; SILICON OXIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; TITANIUM OXIDES; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Sharma, Yogesh, E-mail: yks181086@gmail.com, E-mail: rkatiyar@uprrp.edu, Misra, Pankaj, and Katiyar, Ram S., E-mail: yks181086@gmail.com, E-mail: rkatiyar@uprrp.edu. Unipolar resistive switching behavior of amorphous YCrO{sub 3} films for nonvolatile memory applications. United States: N. p., 2014. Web. doi:10.1063/1.4893661.
Sharma, Yogesh, E-mail: yks181086@gmail.com, E-mail: rkatiyar@uprrp.edu, Misra, Pankaj, & Katiyar, Ram S., E-mail: yks181086@gmail.com, E-mail: rkatiyar@uprrp.edu. Unipolar resistive switching behavior of amorphous YCrO{sub 3} films for nonvolatile memory applications. United States. doi:10.1063/1.4893661.
Sharma, Yogesh, E-mail: yks181086@gmail.com, E-mail: rkatiyar@uprrp.edu, Misra, Pankaj, and Katiyar, Ram S., E-mail: yks181086@gmail.com, E-mail: rkatiyar@uprrp.edu. Thu . "Unipolar resistive switching behavior of amorphous YCrO{sub 3} films for nonvolatile memory applications". United States. doi:10.1063/1.4893661.
@article{osti_22314359,
title = {Unipolar resistive switching behavior of amorphous YCrO{sub 3} films for nonvolatile memory applications},
author = {Sharma, Yogesh, E-mail: yks181086@gmail.com, E-mail: rkatiyar@uprrp.edu and Misra, Pankaj and Katiyar, Ram S., E-mail: yks181086@gmail.com, E-mail: rkatiyar@uprrp.edu},
abstractNote = {Amorphous YCrO{sub 3} (YCO) films were prepared on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of ∼10{sup 5} between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space–charge limited conduction mechanisms, respectively.},
doi = {10.1063/1.4893661},
journal = {Journal of Applied Physics},
number = 8,
volume = 116,
place = {United States},
year = {Thu Aug 28 00:00:00 EDT 2014},
month = {Thu Aug 28 00:00:00 EDT 2014}
}