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Title: Electron mobility calculation for graphene on substrates

Abstract

By a semiclassical Monte Carlo method, the electron mobility in graphene is calculated for three different substrates: SiO{sub 2}, HfO{sub 2}, and hexagonal boron nitride (h-BN). The calculations account for polar and non-polar surface optical phonon (OP) scatterings induced by the substrates and charged impurity (CI) scattering, in addition to intrinsic phonon scattering in pristine graphene. It is found that HfO{sub 2} is unsuitable as a substrate, because the surface OP scattering of the substrate significantly degrades the electron mobility. The mobility on the SiO{sub 2} and h-BN substrates decreases due to CI scattering. However, the mobility on the h-BN substrate exhibits a high electron mobility of 170 000 cm{sup 2}/(V·s) for electron densities less than 10{sup 12 }cm{sup −2}. Therefore, h-BN should be an appealing substrate for graphene devices, as confirmed experimentally.

Authors:
;  [1];  [1];  [2]; ;  [3];  [2]
  1. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1, Rokko-dai, Nada-ku, Kobe 657-8501 (Japan)
  2. (Japan)
  3. Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0075 (Japan)
Publication Date:
OSTI Identifier:
22314337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; APPEALS; BORON NITRIDES; ELECTRON DENSITY; ELECTRON MOBILITY; GRAPHENE; HAFNIUM OXIDES; IMPURITIES; MONTE CARLO METHOD; PHONONS; SCATTERING; SEMICLASSICAL APPROXIMATION; SILICA; SILICON OXIDES; SUBSTRATES; SURFACES

Citation Formats

Hirai, Hideki, Ogawa, Matsuto, Tsuchiya, Hideaki, E-mail: tsuchiya@eedept.kobe-u.ac.jp, Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0075, Kamakura, Yoshinari, Mori, Nobuya, and Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871. Electron mobility calculation for graphene on substrates. United States: N. p., 2014. Web. doi:10.1063/1.4893650.
Hirai, Hideki, Ogawa, Matsuto, Tsuchiya, Hideaki, E-mail: tsuchiya@eedept.kobe-u.ac.jp, Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0075, Kamakura, Yoshinari, Mori, Nobuya, & Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871. Electron mobility calculation for graphene on substrates. United States. doi:10.1063/1.4893650.
Hirai, Hideki, Ogawa, Matsuto, Tsuchiya, Hideaki, E-mail: tsuchiya@eedept.kobe-u.ac.jp, Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0075, Kamakura, Yoshinari, Mori, Nobuya, and Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871. Thu . "Electron mobility calculation for graphene on substrates". United States. doi:10.1063/1.4893650.
@article{osti_22314337,
title = {Electron mobility calculation for graphene on substrates},
author = {Hirai, Hideki and Ogawa, Matsuto and Tsuchiya, Hideaki, E-mail: tsuchiya@eedept.kobe-u.ac.jp and Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0075 and Kamakura, Yoshinari and Mori, Nobuya and Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871},
abstractNote = {By a semiclassical Monte Carlo method, the electron mobility in graphene is calculated for three different substrates: SiO{sub 2}, HfO{sub 2}, and hexagonal boron nitride (h-BN). The calculations account for polar and non-polar surface optical phonon (OP) scatterings induced by the substrates and charged impurity (CI) scattering, in addition to intrinsic phonon scattering in pristine graphene. It is found that HfO{sub 2} is unsuitable as a substrate, because the surface OP scattering of the substrate significantly degrades the electron mobility. The mobility on the SiO{sub 2} and h-BN substrates decreases due to CI scattering. However, the mobility on the h-BN substrate exhibits a high electron mobility of 170 000 cm{sup 2}/(V·s) for electron densities less than 10{sup 12 }cm{sup −2}. Therefore, h-BN should be an appealing substrate for graphene devices, as confirmed experimentally.},
doi = {10.1063/1.4893650},
journal = {Journal of Applied Physics},
number = 8,
volume = 116,
place = {United States},
year = {Thu Aug 28 00:00:00 EDT 2014},
month = {Thu Aug 28 00:00:00 EDT 2014}
}