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Title: Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films

Abstract

In this study, the effect of the presence of secondary phases on the structural, electrical, and thermoelectric properties of nanocomposite Bi{sub 2}Te{sub 3} films prepared by co-sputtering of silicon and carbon with Bi{sub 2}Te{sub 3} has been investigated. Growth temperature and the presence of Si and C phase are observed to have a strong effect on the topography and orientation of crystallites. X-ray diffraction study demonstrates that Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}:C samples have preferred (0 0 15) orientation in comparison to Bi{sub 2}Te{sub 3}:Si sample, which have randomly oriented crystallites. Atomic force, conducting atomic force, and scanning thermal microscopy analysis show significant differences in topographical, electrical, and thermal conductivity contrasts in Bi{sub 2}Te{sub 3}:Si and Bi{sub 2}Te{sub 3}:C samples. Due to the randomly oriented crystallites and the presence of Si along the crystallite boundaries, appreciable Seebeck coefficient, higher electrical conductivity, and lower thermal conductivity is achieved resulting in relatively higher value of power factor (3.71 mW K{sup −2} m{sup −1}) for Bi{sub 2}Te{sub 3}:Si sample. This study shows that by incorporating a secondary phase along crystallite boundaries, microstructural, electrical, and thermoelectric properties of the composite samples can be modified.

Authors:
;  [1]
  1. Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)
Publication Date:
OSTI Identifier:
22314334
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH TELLURIDES; CARBON; COMPARATIVE EVALUATIONS; COMPOSITE MATERIALS; ELECTRIC CONDUCTIVITY; MICROSCOPY; MICROSTRUCTURE; NANOSTRUCTURES; POWER FACTOR; RANDOMNESS; SILICON; SPUTTERING; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Agarwal, Khushboo, and Mehta, B. R., E-mail: brmehta@physics.iitd.ac.in. Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films. United States: N. p., 2014. Web. doi:10.1063/1.4894145.
Agarwal, Khushboo, & Mehta, B. R., E-mail: brmehta@physics.iitd.ac.in. Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films. United States. doi:10.1063/1.4894145.
Agarwal, Khushboo, and Mehta, B. R., E-mail: brmehta@physics.iitd.ac.in. Thu . "Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films". United States. doi:10.1063/1.4894145.
@article{osti_22314334,
title = {Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films},
author = {Agarwal, Khushboo and Mehta, B. R., E-mail: brmehta@physics.iitd.ac.in},
abstractNote = {In this study, the effect of the presence of secondary phases on the structural, electrical, and thermoelectric properties of nanocomposite Bi{sub 2}Te{sub 3} films prepared by co-sputtering of silicon and carbon with Bi{sub 2}Te{sub 3} has been investigated. Growth temperature and the presence of Si and C phase are observed to have a strong effect on the topography and orientation of crystallites. X-ray diffraction study demonstrates that Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}:C samples have preferred (0 0 15) orientation in comparison to Bi{sub 2}Te{sub 3}:Si sample, which have randomly oriented crystallites. Atomic force, conducting atomic force, and scanning thermal microscopy analysis show significant differences in topographical, electrical, and thermal conductivity contrasts in Bi{sub 2}Te{sub 3}:Si and Bi{sub 2}Te{sub 3}:C samples. Due to the randomly oriented crystallites and the presence of Si along the crystallite boundaries, appreciable Seebeck coefficient, higher electrical conductivity, and lower thermal conductivity is achieved resulting in relatively higher value of power factor (3.71 mW K{sup −2} m{sup −1}) for Bi{sub 2}Te{sub 3}:Si sample. This study shows that by incorporating a secondary phase along crystallite boundaries, microstructural, electrical, and thermoelectric properties of the composite samples can be modified.},
doi = {10.1063/1.4894145},
journal = {Journal of Applied Physics},
number = 8,
volume = 116,
place = {United States},
year = {Thu Aug 28 00:00:00 EDT 2014},
month = {Thu Aug 28 00:00:00 EDT 2014}
}
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