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Title: In-situ spectroscopic ellipsometry and structural study of HfO{sub 2} thin films deposited by radio frequency magnetron sputtering

Abstract

We have investigated the reduction of unwanted interfacial SiO{sub 2} layer at HfO{sub 2}/Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO{sub 2} thin films for possible direct contact between HfO{sub 2} thin film and Si substrate, necessary for the future generation devices based on high-κ HfO{sub 2} gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO{sub 2} thin films and also to undertake the in-situ characterization of the high-κ HfO{sub 2} thin films deposited on n-type 〈100〉 crystalline silicon substrate. The formation of the unwanted interfacial SiO{sub 2} layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO{sub 2} thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-κ HfO{sub 2} thin films are crystalline although they were depositedmore » at room temperature.« less

Authors:
;  [1];  [2]
  1. Department of Physics, Izmir Institute of Technology (IZTECH), Urla, 35430 Izmir (Turkey)
  2. Department of Physics, Utkal University, Bhubaneswar 751004 (India)
Publication Date:
OSTI Identifier:
22314333
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPOSITS; ELLIPSOMETRY; HAFNIUM OXIDES; HYDROFLUORIC ACID; LAYERS; MAGNETRONS; METALS; RADIOWAVE RADIATION; SILICA; SILICON; SILICON OXIDES; SPUTTERING; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Cantas, Ayten, Aygun, Gulnur, E-mail: gulnuraygun@iyte.edu.tr, and Basa, Deepak Kumar. In-situ spectroscopic ellipsometry and structural study of HfO{sub 2} thin films deposited by radio frequency magnetron sputtering. United States: N. p., 2014. Web. doi:10.1063/1.4893708.
Cantas, Ayten, Aygun, Gulnur, E-mail: gulnuraygun@iyte.edu.tr, & Basa, Deepak Kumar. In-situ spectroscopic ellipsometry and structural study of HfO{sub 2} thin films deposited by radio frequency magnetron sputtering. United States. doi:10.1063/1.4893708.
Cantas, Ayten, Aygun, Gulnur, E-mail: gulnuraygun@iyte.edu.tr, and Basa, Deepak Kumar. Thu . "In-situ spectroscopic ellipsometry and structural study of HfO{sub 2} thin films deposited by radio frequency magnetron sputtering". United States. doi:10.1063/1.4893708.
@article{osti_22314333,
title = {In-situ spectroscopic ellipsometry and structural study of HfO{sub 2} thin films deposited by radio frequency magnetron sputtering},
author = {Cantas, Ayten and Aygun, Gulnur, E-mail: gulnuraygun@iyte.edu.tr and Basa, Deepak Kumar},
abstractNote = {We have investigated the reduction of unwanted interfacial SiO{sub 2} layer at HfO{sub 2}/Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO{sub 2} thin films for possible direct contact between HfO{sub 2} thin film and Si substrate, necessary for the future generation devices based on high-κ HfO{sub 2} gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO{sub 2} thin films and also to undertake the in-situ characterization of the high-κ HfO{sub 2} thin films deposited on n-type 〈100〉 crystalline silicon substrate. The formation of the unwanted interfacial SiO{sub 2} layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO{sub 2} thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-κ HfO{sub 2} thin films are crystalline although they were deposited at room temperature.},
doi = {10.1063/1.4893708},
journal = {Journal of Applied Physics},
number = 8,
volume = 116,
place = {United States},
year = {Thu Aug 28 00:00:00 EDT 2014},
month = {Thu Aug 28 00:00:00 EDT 2014}
}