Large-scale fabrication of BN tunnel barriers for graphene spintronics

doi:https://doi.org/10.1063/1.4893578

Title: Large-scale fabrication of BN tunnel barriers for graphene spintronics

Full Record
Other Related Research

Abstract

We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by Hexagonal boron nitride, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of ∼260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.

Authors:

Fu, Wangyang; Makk, Péter; Maurand, Romain; Bräuninger, Matthias; Schönenberger, Christian ^[1]

Department of Physics, University of Basel, Basel (Switzerland)

Publication Date:: 2014-08-21

OSTI Identifier:: 22314306

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 116; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON NITRIDES; CHEMICAL VAPOR DEPOSITION; DEPOSITS; FABRICATION; GRAPHENE; LAYERS; MATERIALS; RELAXATION TIME; SPIN; TUNNEL EFFECT

Citation Formats


                    Fu, Wangyang, Makk, Péter, Maurand, Romain, Bräuninger, Matthias, and Schönenberger, Christian. Large-scale fabrication of BN tunnel barriers for graphene spintronics.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4893578.

Copy to clipboard


                    Fu, Wangyang, Makk, Péter, Maurand, Romain, Bräuninger, Matthias, & Schönenberger, Christian. Large-scale fabrication of BN tunnel barriers for graphene spintronics.  United States.  https://doi.org/10.1063/1.4893578

Copy to clipboard


                    Fu, Wangyang, Makk, Péter, Maurand, Romain, Bräuninger, Matthias, and Schönenberger, Christian. Thu .  
        "Large-scale fabrication of BN tunnel barriers for graphene spintronics".  United States.  https://doi.org/10.1063/1.4893578.

Copy to clipboard


                    
@article{osti_22314306,

  title        = {Large-scale fabrication of BN tunnel barriers for graphene spintronics},

  author       = {Fu, Wangyang and Makk, Péter and Maurand, Romain and Bräuninger, Matthias and Schönenberger, Christian},

  abstractNote = {We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by Hexagonal boron nitride, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of ∼260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.},

  doi          = {10.1063/1.4893578},

  url          = {https://www.osti.gov/biblio/22314306},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 7,

  volume       = 116,

  place        = {United States},

  year         = {2014},

  month        = {8}

}

Copy to clipboard

Journal Article:

https://doi.org/10.1063/1.4893578

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Journal Article Kamalakar, M. Venkata, E-mail: venkata.mutta@chalmers.se ; Dankert, André ; Bergsten, Johan ; ... - Applied Physics Letters

Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ≈500 ps and spin diffusion length ≈1.6 μm in graphene with tunnel spin polarization ≈11% atmore »« less
https://doi.org/10.1063/1.4902814
Are Al{sub 2}O{sub 3} and MgO tunnel barriers suitable for spin injection in graphene?

Journal Article Dlubak, B ; Seneor, P ; Anane, A ; ... - Applied Physics Letters

We report on the structural impact on graphene and multi-layers graphene of the growth by sputtering of tunnel barriers. Sputtered Al{sub 2}O{sub 3} and MgO barriers were chosen for their well-known efficiency as spin injectors in spintronics devices. The impact of the growth on the structure of graphene and up to 4-layer flakes was analyzed by Raman spectroscopy. This study reveals that for Al{sub 2}O{sub 3} growth, the impact is moderate for a monolayer and decreases sharply for bilayers and above. In the case of MgO all the flakes underwent a strong amorphization. Moreover, this reveals that while single layermore »« less
https://doi.org/10.1063/1.3476339
Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal

Journal Article Cubukcu, M. ; Laczkowski, P. ; Vergnaud, C. ; ... - Journal of Applied Physics

We report spin transport in CVD graphene-based lateral spin valves using different magnetic contacts. We compared the spin signal amplitude measured on devices where the cobalt layer is directly in contact with the graphene to the one obtained using tunnel contacts. Although a sizeable spin signal (up to ∼2 Ω) is obtained with direct contacts, the signal is strongly enhanced (∼400 Ω) by inserting a tunnel barrier. In addition, we studied the resistance-area product (R.A) of a variety of contacts on CVD graphene. In particular, we compared the R.A products of alumina and magnesium oxide tunnel barriers grown by sputteringmore »« less
https://doi.org/10.1063/1.4913710
Spin orbit splitting of the photon induced Fano resonance in an oscillating graphene electrostatic barrier

Journal Article Biswas, R. ; Sinha, C. - Journal of Applied Physics

We investigate theoretically the effect of a time dependent oscillating potential on the transport property of the Dirac Fermion through a monolayer graphene electrostatic barrier under the influence of the Rashba spin orbit interaction. The time dependent problem is solved in the frame work of the non-perturbative Floquet approach. It is noted that the dynamic condition of the barrier may be controlled by tuning the Rashba parameter. Introduction of the spin orbit interaction causes splitting of the Fano resonance (FR), a characteristic feature in photon assisted tunneling. The separation between the spin split FR's gives an indirect measure of themore »« less
https://doi.org/10.1063/1.4869846
Photon induced tunneling of electron through a graphene electrostatic barrier

Journal Article Biswas, R. ; Sinha, C. - Journal of Applied Physics

The influence of an external intense laser field on the tunneling transport (ballistic) of the Dirac fermions through a monolayer graphene electrostatic barrier is studied in the framework of the Floquet approach for a continuous wave, linearly polarized, monochromatic laser. The Klein tunneling is shown to be suppressed by the irradiation of a strong laser field, arising due to breaking of chiral symmetry. The symmetric nature of the field free angular transmission spectrum around the normal to the well-barrier interface is destroyed due to the additional coupling between the pseudo-spin and the time dependent vector potential. The energy distribution ofmore »« less
https://doi.org/10.1063/1.4829446

Similar Records