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Title: A theoretical study of blue phosphorene nanoribbons based on first-principles calculations

Abstract

Based on first-principles calculations, we present a quantum confinement mechanism for the band gaps of blue phosphorene nanoribbons (BPNRs) as a function of their widths. The BPNRs considered have either armchair or zigzag shaped edges on both sides with hydrogen saturation. Both the two types of nanoribbons are shown to be indirect semiconductors. An enhanced energy gap of around 1 eV can be realized when the ribbon's width decreases to ∼10 Å. The underlying physics is ascribed to the quantum confinement effect. More importantly, the parameters to describe quantum confinement are obtained by fitting the calculated band gaps with respect to their widths. The results show that the quantum confinement in armchair nanoribbons is stronger than that in zigzag ones. This study provides an efficient approach to tune the band gap in BPNRs.

Authors:
; ; ; ;  [1]
  1. Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)
Publication Date:
OSTI Identifier:
22314297
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ENERGY GAP; EV RANGE 01-10; NANOSTRUCTURES; SATURATION; SEMICONDUCTOR MATERIALS; WIDTH

Citation Formats

Xie, Jiafeng, Si, M. S., E-mail: sims@lzu.edu.cn, Yang, D. Z., Zhang, Z. Y., and Xue, D. S. A theoretical study of blue phosphorene nanoribbons based on first-principles calculations. United States: N. p., 2014. Web. doi:10.1063/1.4893589.
Xie, Jiafeng, Si, M. S., E-mail: sims@lzu.edu.cn, Yang, D. Z., Zhang, Z. Y., & Xue, D. S. A theoretical study of blue phosphorene nanoribbons based on first-principles calculations. United States. doi:10.1063/1.4893589.
Xie, Jiafeng, Si, M. S., E-mail: sims@lzu.edu.cn, Yang, D. Z., Zhang, Z. Y., and Xue, D. S. Thu . "A theoretical study of blue phosphorene nanoribbons based on first-principles calculations". United States. doi:10.1063/1.4893589.
@article{osti_22314297,
title = {A theoretical study of blue phosphorene nanoribbons based on first-principles calculations},
author = {Xie, Jiafeng and Si, M. S., E-mail: sims@lzu.edu.cn and Yang, D. Z. and Zhang, Z. Y. and Xue, D. S.},
abstractNote = {Based on first-principles calculations, we present a quantum confinement mechanism for the band gaps of blue phosphorene nanoribbons (BPNRs) as a function of their widths. The BPNRs considered have either armchair or zigzag shaped edges on both sides with hydrogen saturation. Both the two types of nanoribbons are shown to be indirect semiconductors. An enhanced energy gap of around 1 eV can be realized when the ribbon's width decreases to ∼10 Å. The underlying physics is ascribed to the quantum confinement effect. More importantly, the parameters to describe quantum confinement are obtained by fitting the calculated band gaps with respect to their widths. The results show that the quantum confinement in armchair nanoribbons is stronger than that in zigzag ones. This study provides an efficient approach to tune the band gap in BPNRs.},
doi = {10.1063/1.4893589},
journal = {Journal of Applied Physics},
number = 7,
volume = 116,
place = {United States},
year = {Thu Aug 21 00:00:00 EDT 2014},
month = {Thu Aug 21 00:00:00 EDT 2014}
}
  • Blue phosphorene (BP) was theoretically predicted to be thermally stable recently. Considering its similar in-layer hexagonal lattice to MoS{sub 2}, MoS{sub 2} could be an appropriate substrate to grow BP in experiments. In this work, the van der Waals (vdW) heterostructures are constructed by stacking BP on top of MoS{sub 2}. The thermal stability and electronic structures are evaluated based on first principles calculations with vdW-corrected exchange-correlation functional. The formation of the heterostructures is demonstrated to be exothermic and the most stable stacking configuration is confirmed. The heterostructures BP/MoS{sub 2} preserve both the properties of BP and MoS{sub 2} butmore » exhibit relatively narrower bandgaps due to the interlayer coupling effect. The band structures can be further engineered by applying external electric fields. An indirect–direct bandgap transition in bilayer BP/MoS{sub 2} is demonstrated to be controlled by the symmetry property of the built-in electric dipole fields. - Graphical abstract: An indirect-direct band gap transition occurs in van der Waals heterostructure of MoS{sub 2}/BP under external electric fields which is demonstrated to be controlled by the symmetry of the built-in electric dipole fields. - Highlights: • The stacking of heterostructures of BP/MoS{sub 2} is demonstrated to be exothermic. • This suggests that it is possible to grow BP using MoS{sub 2} as the substrate. • The band structures of the heterostructures are exploited. • It realizes an indirect–direct gap transition under external electric fields. • The symmetry of the built-in electric dipole fields controls such gap transition.« less
  • We investigated the electronic structure and magnetism of zigzag blue phosphorene nanoribbons (ZBPNRs) using first principles density functional theory calculations by changing the widths of ZBPNRs from 1.5 to 5 nm. In addition, the effect of H and O passivation was explored as well. The ZBPNRs displayed intra-edge antiferromagnetic ground state with a semiconducting band gap of ∼0.35 eV; and this was insensitive to the edge structure relaxation effect. However, the edge magnetism of ZBPNRs disappeared with H-passivation. Moreover, the band gap of H-passivated ZBPNRs was greatly enhanced because the calculated band gap was ∼1.77 eV, and this was almost the same asmore » that of two-dimensional blue phosphorene layer. For O-passivated ZBPNRs, we also found an intra-edge antiferromagnetic state. Besides, both unpassivated and O-passivated ZBPNRs preserved almost the same band gap. We predict that the electronic band structure and magnetic properties can be controlled by means of passivation. Moreover, the edge magnetism can be also modulated by the strain. Nonetheless, the intrinsic physical properties are size independent. This feature can be an advantage for device applications because it may not be necessary to precisely control the width of the nanoribbon.« less
  • Using the many-body perturbation GW theory, we study the quasiparticle conduction-band offsets of phosphorene, a two-dimensional atomic layer of black phosphorus, and transition-metal dichalcogenides (TMDs). The calculated large exciton binding energies of phosphorene and TMDs indicate that their type-II heterostructures are suitable for excitonic thin-film solar cell applications. Our results show that these heterojunctions have a potential maximum power conversion efficiency of up to 12%, which can be further enhanced up to 20% by strain engineering.
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  • The electronic and magnetic properties of armchair edge MoS{sub 2} nanoribbons (MoS{sub 2}-ANRs) underboth the external strain and transverse electric field (E{sub t}) have been systematically investigated by using the first-principles calculations. It is found that: (1) If no electric field is applied, an interesting structural phase transition would appear under a large tensile strain, leading to a new phase MoS{sub 2}-A'NR, and inducing a big jump peak of the band gap in the transition region. But, the band gap response to compressive strains is much different from that to tensile strain, showing no the structural phase transition. (2) Undermore » the small tensile strains (<10%), the combined E{sub t} and tensile strain give rise to a positive superposition (resonant) effect on the band gap reduction at low E{sub t} (<3 V/nm), and oppositely a negative superposition (antiresonant) one at high E{sub t} (>4 V/nm). On the other hand, the external compressive strains have always presented the resonant effect on the band gap reduction, induced by the electric field. (3) After the structural phase transition, an external large tensile strain could greatly reduce the critical field E{sub tc} causing the band gap closure, and make the system become a ferromagnetic (FM) metal at a relative low E{sub t} (e.g., <4 V/nm), which is very helpful for its promising applications in nano-mechanical spintronics devices. (4) At high E{sub t} (>10 V/nm), the magnetic moments of both the MoS{sub 2}-ANR and MoS{sub 2}-A'NR in their FM states could be enhanced greatly by a tensile strain. Our numerical results of effectively tuning physical properties of MoS{sub 2}-ANRs by combined external strain and electric field may open their new potential applications in nanoelectronics and spintronics.« less