Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891052· OSTI ID:22311244

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori ^[1]; Yokoyama, Masaaki ^[2]; Seki, Shu ^[1]

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1. Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan)
2. Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan)

The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

• OSTI ID: 22311244
• Journal Information: Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
CHARGE CARRIERS
CRYSTAL DEFECTS
DIELECTRIC MATERIALS
FIELD EFFECT TRANSISTORS
HOLE MOBILITY
INTERFACES
LAYERS
MICROWAVE RADIATION
NONDESTRUCTIVE ANALYSIS
PENTACENE
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
THIN FILMS
TIME RESOLUTION
TRANSIENTS
TRAPPING
TRAPS