skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

Abstract

The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

Authors:
; ; ;  [1];  [2];  [1];  [3]
  1. Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan)
  2. Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
22311244
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; CHARGE CARRIERS; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; INTERFACES; LAYERS; MICROWAVE RADIATION; NONDESTRUCTIVE ANALYSIS; PENTACENE; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; THIN FILMS; TIME RESOLUTION; TRANSIENTS; TRAPPING; TRAPS

Citation Formats

Choi, Wookjin, Miyakai, Tomoyo, Sakurai, Tsuneaki, Saeki, Akinori, Yokoyama, Masaaki, Seki, Shu, E-mail: seki@chem.eng.osaka-u.ac.jp, and Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871. Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary. United States: N. p., 2014. Web. doi:10.1063/1.4891052.
Choi, Wookjin, Miyakai, Tomoyo, Sakurai, Tsuneaki, Saeki, Akinori, Yokoyama, Masaaki, Seki, Shu, E-mail: seki@chem.eng.osaka-u.ac.jp, & Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871. Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary. United States. doi:10.1063/1.4891052.
Choi, Wookjin, Miyakai, Tomoyo, Sakurai, Tsuneaki, Saeki, Akinori, Yokoyama, Masaaki, Seki, Shu, E-mail: seki@chem.eng.osaka-u.ac.jp, and Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871. Mon . "Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary". United States. doi:10.1063/1.4891052.
@article{osti_22311244,
title = {Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary},
author = {Choi, Wookjin and Miyakai, Tomoyo and Sakurai, Tsuneaki and Saeki, Akinori and Yokoyama, Masaaki and Seki, Shu, E-mail: seki@chem.eng.osaka-u.ac.jp and Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871},
abstractNote = {The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.},
doi = {10.1063/1.4891052},
journal = {Applied Physics Letters},
number = 3,
volume = 105,
place = {United States},
year = {Mon Jul 21 00:00:00 EDT 2014},
month = {Mon Jul 21 00:00:00 EDT 2014}
}