skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of oxygen plasma and thermal oxidation on shallow nitrogen-vacancy centers in diamond

Abstract

We investigate the effect of two different surface treatments on shallow nitrogen-vacancy (NV) centers in diamond. Short duration oxygen plasma exposure is found to damage near-surface NV centers, resulting in their disappearance in fluorescence images. Subsequent annealing creates large numbers of new NV centers, attributed to plasma-induced vacancy creation. By tracking individual NV centers during thermal oxidation, we show that oxidation at 550 °C results in modest improvement of spin coherence. Higher temperature oxidations correlate with gradual decline in spin coherence and eventual instability of NV centers before ultimate disappearance. This is indicative of a reduction of the NV-to-surface distance due to oxidative etching. Thermal oxidation can offer controlled access to near-surface NV spins at the nanometer scale, an important requirement for many applications of NV-based nanomagnetometry.

Authors:
;  [1];  [2]; ; ; ;  [1]
  1. IBM Research Division, Almaden Research Center, San Jose, California 95120 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22311205
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; DAMAGE; DIAMONDS; FLUORESCENCE; INSTABILITY; NITROGEN; OXIDATION; OXYGEN; PLASMA; REDUCTION; SPIN; SURFACE TREATMENTS; SURFACES; VACANCIES

Citation Formats

Kim, M., Rugar, D., E-mail: rugar@us.ibm.com, Center for Probing the Nanoscale, Stanford University, Stanford, California 94305, Mamin, H. J., Sherwood, M. H., Rettner, C. T., and Frommer, J.. Effect of oxygen plasma and thermal oxidation on shallow nitrogen-vacancy centers in diamond. United States: N. p., 2014. Web. doi:10.1063/1.4891839.
Kim, M., Rugar, D., E-mail: rugar@us.ibm.com, Center for Probing the Nanoscale, Stanford University, Stanford, California 94305, Mamin, H. J., Sherwood, M. H., Rettner, C. T., & Frommer, J.. Effect of oxygen plasma and thermal oxidation on shallow nitrogen-vacancy centers in diamond. United States. doi:10.1063/1.4891839.
Kim, M., Rugar, D., E-mail: rugar@us.ibm.com, Center for Probing the Nanoscale, Stanford University, Stanford, California 94305, Mamin, H. J., Sherwood, M. H., Rettner, C. T., and Frommer, J.. Mon . "Effect of oxygen plasma and thermal oxidation on shallow nitrogen-vacancy centers in diamond". United States. doi:10.1063/1.4891839.
@article{osti_22311205,
title = {Effect of oxygen plasma and thermal oxidation on shallow nitrogen-vacancy centers in diamond},
author = {Kim, M. and Rugar, D., E-mail: rugar@us.ibm.com and Center for Probing the Nanoscale, Stanford University, Stanford, California 94305 and Mamin, H. J. and Sherwood, M. H. and Rettner, C. T. and Frommer, J.},
abstractNote = {We investigate the effect of two different surface treatments on shallow nitrogen-vacancy (NV) centers in diamond. Short duration oxygen plasma exposure is found to damage near-surface NV centers, resulting in their disappearance in fluorescence images. Subsequent annealing creates large numbers of new NV centers, attributed to plasma-induced vacancy creation. By tracking individual NV centers during thermal oxidation, we show that oxidation at 550 °C results in modest improvement of spin coherence. Higher temperature oxidations correlate with gradual decline in spin coherence and eventual instability of NV centers before ultimate disappearance. This is indicative of a reduction of the NV-to-surface distance due to oxidative etching. Thermal oxidation can offer controlled access to near-surface NV spins at the nanometer scale, an important requirement for many applications of NV-based nanomagnetometry.},
doi = {10.1063/1.4891839},
journal = {Applied Physics Letters},
number = 4,
volume = 105,
place = {United States},
year = {Mon Jul 28 00:00:00 EDT 2014},
month = {Mon Jul 28 00:00:00 EDT 2014}
}