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Title: Voltage switching of a VO{sub 2} memory metasurface using ionic gel

Abstract

We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO{sub 2}) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO{sub 2} layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO{sub 2} into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO{sub 2} based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte–VO{sub 2} interface.

Authors:
; ; ; ; ; ;  [1]; ;  [2]; ; ;  [3];  [4];  [1];  [5];  [4];  [6]
  1. Department of Physics, The University of California at San Diego, La Jolla, California 92093 (United States)
  2. Department of Physics, Boston University, Boston, Massachusetts 02215 (United States)
  3. Center for Metamaterials and Integrated Plasmonics, Pratt School of Engineering, Duke University, Durham, North Carolina 27708 (United States)
  4. Metal-Insulator Transition Creative Research Center, ETRI, Daejeon 305-350 (Korea, Republic of)
  5. (United States)
  6. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22311187
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ELECTROLYTES; EQUIPMENT; GELS; GRAPHENE; INTERFACES; LAYERS; METALS; MIGRATION; OXYGEN; RESONANCE; SATURATION; THZ RANGE; VANADIUM OXIDES

Citation Formats

Goldflam, M. D., Liu, M. K., Chapler, B. C., Stinson, H. T., Sternbach, A. J., McLeod, A. S., Basov, D. N., E-mail: dbasov@physics.ucsd.edu, Zhang, J. D., Geng, K., Royal, M., Jokerst, N. M., Smith, D. R., Kim, Bong-Jun, Averitt, R. D., Department of Physics, Boston University, Boston, Massachusetts 02215, Kim, H-T., and School of Advanced Device Technology, University of Science and Technology, Daejeon 305-333. Voltage switching of a VO{sub 2} memory metasurface using ionic gel. United States: N. p., 2014. Web. doi:10.1063/1.4891765.
Goldflam, M. D., Liu, M. K., Chapler, B. C., Stinson, H. T., Sternbach, A. J., McLeod, A. S., Basov, D. N., E-mail: dbasov@physics.ucsd.edu, Zhang, J. D., Geng, K., Royal, M., Jokerst, N. M., Smith, D. R., Kim, Bong-Jun, Averitt, R. D., Department of Physics, Boston University, Boston, Massachusetts 02215, Kim, H-T., & School of Advanced Device Technology, University of Science and Technology, Daejeon 305-333. Voltage switching of a VO{sub 2} memory metasurface using ionic gel. United States. doi:10.1063/1.4891765.
Goldflam, M. D., Liu, M. K., Chapler, B. C., Stinson, H. T., Sternbach, A. J., McLeod, A. S., Basov, D. N., E-mail: dbasov@physics.ucsd.edu, Zhang, J. D., Geng, K., Royal, M., Jokerst, N. M., Smith, D. R., Kim, Bong-Jun, Averitt, R. D., Department of Physics, Boston University, Boston, Massachusetts 02215, Kim, H-T., and School of Advanced Device Technology, University of Science and Technology, Daejeon 305-333. Mon . "Voltage switching of a VO{sub 2} memory metasurface using ionic gel". United States. doi:10.1063/1.4891765.
@article{osti_22311187,
title = {Voltage switching of a VO{sub 2} memory metasurface using ionic gel},
author = {Goldflam, M. D. and Liu, M. K. and Chapler, B. C. and Stinson, H. T. and Sternbach, A. J. and McLeod, A. S. and Basov, D. N., E-mail: dbasov@physics.ucsd.edu and Zhang, J. D. and Geng, K. and Royal, M. and Jokerst, N. M. and Smith, D. R. and Kim, Bong-Jun and Averitt, R. D. and Department of Physics, Boston University, Boston, Massachusetts 02215 and Kim, H-T. and School of Advanced Device Technology, University of Science and Technology, Daejeon 305-333},
abstractNote = {We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO{sub 2}) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO{sub 2} layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO{sub 2} into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO{sub 2} based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte–VO{sub 2} interface.},
doi = {10.1063/1.4891765},
journal = {Applied Physics Letters},
number = 4,
volume = 105,
place = {United States},
year = {Mon Jul 28 00:00:00 EDT 2014},
month = {Mon Jul 28 00:00:00 EDT 2014}
}