Tuning the external optical feedback-sensitivity of a passively mode-locked quantum dot laser
- Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, 302 Whittemore Hall, Blacksburg, Virginia 24061 (United States)
- Télécom ParisTech, Ecole Nationale Supérieure des Télécommunications, CNRS LTCI, 46 rue Barrault, 75634 Paris Cedex 13 (France)
- Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)
The external optical feedback-sensitivity of a two-section, passively mode-locked quantum dot laser operating at elevated temperature is experimentally investigated as a function of absorber bias voltage. Results show that the reverse-bias voltage on the absorber has a direct impact on the damping rate of the free-running relaxation oscillations of the optical signal output, thereby enabling interactive external control over the feedback-response of the device, even under the nearly resonant cavity configuration. The combination of high temperature operation and tunable feedback-sensitivity is highly promising from a technological standpoint, in particular, for applications requiring monolithic integration of multi-component architectures on a single chip in order to accomplish, for instance, the dual-objectives of stable pulse quality and isolation from parasitic reflections.
- OSTI ID:
- 22311183
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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