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Title: Semi-empirical device model for Cu{sub 2}ZnSn(S,Se){sub 4} solar cells

Abstract

We present a device model for the hydrazine processed kesterite Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) solar cell with a world record efficiency of ∼12.6%. Detailed comparison of the simulation results, performed using wxAMPS software, to the measured device parameters shows that our model captures the vast majority of experimental observations, including V{sub OC}, J{sub SC}, FF, and efficiency under normal operating conditions, and temperature vs. V{sub OC}, sun intensity vs. V{sub OC}, and quantum efficiency. Moreover, our model is consistent with material properties derived from various techniques. Interestingly, this model does not have any interface defects/states, suggesting that all the experimentally observed features can be accounted for by the bulk properties of CZTSSe. An electrical (mobility) gap that is smaller than the optical gap is critical to fit the V{sub OC} data. These findings point to the importance of tail states in CZTSSe solar cells.

Authors:
; ;  [1]
  1. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
Publication Date:
OSTI Identifier:
22311173
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; COPPER COMPOUNDS; DEFECTS; GLOBAL ASPECTS; HYDRAZINE; INTERFACES; QUANTUM EFFICIENCY; SELENIUM COMPOUNDS; SIMULATION; SOLAR CELLS; SULFUR COMPOUNDS; TIN COMPOUNDS; ZINC COMPOUNDS

Citation Formats

Gokmen, Tayfun, E-mail: tgokmen@us.ibm.com, Gunawan, Oki, and Mitzi, David B. Semi-empirical device model for Cu{sub 2}ZnSn(S,Se){sub 4} solar cells. United States: N. p., 2014. Web. doi:10.1063/1.4890844.
Gokmen, Tayfun, E-mail: tgokmen@us.ibm.com, Gunawan, Oki, & Mitzi, David B. Semi-empirical device model for Cu{sub 2}ZnSn(S,Se){sub 4} solar cells. United States. doi:10.1063/1.4890844.
Gokmen, Tayfun, E-mail: tgokmen@us.ibm.com, Gunawan, Oki, and Mitzi, David B. Mon . "Semi-empirical device model for Cu{sub 2}ZnSn(S,Se){sub 4} solar cells". United States. doi:10.1063/1.4890844.
@article{osti_22311173,
title = {Semi-empirical device model for Cu{sub 2}ZnSn(S,Se){sub 4} solar cells},
author = {Gokmen, Tayfun, E-mail: tgokmen@us.ibm.com and Gunawan, Oki and Mitzi, David B.},
abstractNote = {We present a device model for the hydrazine processed kesterite Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) solar cell with a world record efficiency of ∼12.6%. Detailed comparison of the simulation results, performed using wxAMPS software, to the measured device parameters shows that our model captures the vast majority of experimental observations, including V{sub OC}, J{sub SC}, FF, and efficiency under normal operating conditions, and temperature vs. V{sub OC}, sun intensity vs. V{sub OC}, and quantum efficiency. Moreover, our model is consistent with material properties derived from various techniques. Interestingly, this model does not have any interface defects/states, suggesting that all the experimentally observed features can be accounted for by the bulk properties of CZTSSe. An electrical (mobility) gap that is smaller than the optical gap is critical to fit the V{sub OC} data. These findings point to the importance of tail states in CZTSSe solar cells.},
doi = {10.1063/1.4890844},
journal = {Applied Physics Letters},
number = 3,
volume = 105,
place = {United States},
year = {Mon Jul 21 00:00:00 EDT 2014},
month = {Mon Jul 21 00:00:00 EDT 2014}
}