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Title: InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

Abstract

In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination.

Authors:
; ; ; ; ; ; ; ;  [1];  [1];  [2]
  1. LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
  2. (Turkey)
Publication Date:
OSTI Identifier:
22311168
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AUGER EFFECT; CARRIER DENSITY; CRYSTAL GROWTH; EFFICIENCY; ELECTRIC FIELDS; ELECTRONS; GALLIUM NITRIDES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; POLARIZATION; QUANTUM WELLS; RECOMBINATION; STARK EFFECT

Citation Formats

Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tan, Swee Tiam, Ji, Yun, Kyaw, Zabu, Zhang, Xueliang, Wang, Liancheng, Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org, Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org, and Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination. United States: N. p., 2014. Web. doi:10.1063/1.4891334.
Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tan, Swee Tiam, Ji, Yun, Kyaw, Zabu, Zhang, Xueliang, Wang, Liancheng, Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org, Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org, & Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination. United States. doi:10.1063/1.4891334.
Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tan, Swee Tiam, Ji, Yun, Kyaw, Zabu, Zhang, Xueliang, Wang, Liancheng, Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org, Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org, and Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara. Mon . "InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination". United States. doi:10.1063/1.4891334.
@article{osti_22311168,
title = {InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination},
author = {Zhang, Zi-Hui and Liu, Wei and Ju, Zhengang and Tan, Swee Tiam and Ji, Yun and Kyaw, Zabu and Zhang, Xueliang and Wang, Liancheng and Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org and Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org and Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara},
abstractNote = {In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination.},
doi = {10.1063/1.4891334},
journal = {Applied Physics Letters},
number = 3,
volume = 105,
place = {United States},
year = {Mon Jul 21 00:00:00 EDT 2014},
month = {Mon Jul 21 00:00:00 EDT 2014}
}