Fabrication of SiO{sub 2}/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891166· OSTI ID:22311142

Kita, Koji ^[1]

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1. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

We fabricated SiO{sub 2}/4H-SiC (0001) metal-oxide-semiconductor capacitors with nearly ideal capacitance-voltage characteristics, simply by the control of thermal oxidation conditions which were selected based on thermodynamic and kinetic considerations of SiC oxidation. The interface with low interface defect state density <10{sup 11 }cm{sup −2} eV{sup −1} for the energy range of 0.1–0.4 eV below the conduction band of SiC was obtained by thermal oxidation at 1300 °C in a ramp-heating furnace with a short rise/fall time, followed by low temperature O{sub 2} anneal at 800 °C.

• OSTI ID: 22311142
• Journal Information: Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
CAPACITORS
CRYSTAL DEFECTS
DENSITY
ELECTRIC POTENTIAL
EV RANGE
HEATING
INTERFACES
METALS
OXIDATION
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON OXIDES