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Title: Fabrication of SiO{sub 2}/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation

Abstract

We fabricated SiO{sub 2}/4H-SiC (0001) metal-oxide-semiconductor capacitors with nearly ideal capacitance-voltage characteristics, simply by the control of thermal oxidation conditions which were selected based on thermodynamic and kinetic considerations of SiC oxidation. The interface with low interface defect state density <10{sup 11 }cm{sup −2} eV{sup −1} for the energy range of 0.1–0.4 eV below the conduction band of SiC was obtained by thermal oxidation at 1300 °C in a ramp-heating furnace with a short rise/fall time, followed by low temperature O{sub 2} anneal at 800 °C.

Authors:
 [1];  [1];  [2]
  1. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
  2. (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Publication Date:
OSTI Identifier:
22311142
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; CAPACITORS; CRYSTAL DEFECTS; DENSITY; ELECTRIC POTENTIAL; EV RANGE; HEATING; INTERFACES; METALS; OXIDATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SILICON OXIDES

Citation Formats

Kikuchi, Richard Heihachiro, E-mail: kikuchi@scio.t.u-tokyo.ac.jp, Kita, Koji, and JST-PRESTO, Japan Science and Technology Agency. Fabrication of SiO{sub 2}/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation. United States: N. p., 2014. Web. doi:10.1063/1.4891166.
Kikuchi, Richard Heihachiro, E-mail: kikuchi@scio.t.u-tokyo.ac.jp, Kita, Koji, & JST-PRESTO, Japan Science and Technology Agency. Fabrication of SiO{sub 2}/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation. United States. doi:10.1063/1.4891166.
Kikuchi, Richard Heihachiro, E-mail: kikuchi@scio.t.u-tokyo.ac.jp, Kita, Koji, and JST-PRESTO, Japan Science and Technology Agency. Mon . "Fabrication of SiO{sub 2}/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation". United States. doi:10.1063/1.4891166.
@article{osti_22311142,
title = {Fabrication of SiO{sub 2}/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation},
author = {Kikuchi, Richard Heihachiro, E-mail: kikuchi@scio.t.u-tokyo.ac.jp and Kita, Koji and JST-PRESTO, Japan Science and Technology Agency},
abstractNote = {We fabricated SiO{sub 2}/4H-SiC (0001) metal-oxide-semiconductor capacitors with nearly ideal capacitance-voltage characteristics, simply by the control of thermal oxidation conditions which were selected based on thermodynamic and kinetic considerations of SiC oxidation. The interface with low interface defect state density <10{sup 11 }cm{sup −2} eV{sup −1} for the energy range of 0.1–0.4 eV below the conduction band of SiC was obtained by thermal oxidation at 1300 °C in a ramp-heating furnace with a short rise/fall time, followed by low temperature O{sub 2} anneal at 800 °C.},
doi = {10.1063/1.4891166},
journal = {Applied Physics Letters},
number = 3,
volume = 105,
place = {United States},
year = {Mon Jul 21 00:00:00 EDT 2014},
month = {Mon Jul 21 00:00:00 EDT 2014}
}