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Title: Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

Abstract

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

Authors:
; ; ; ;  [1]; ; ; ; ;  [2]
  1. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany)
  2. Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)
Publication Date:
OSTI Identifier:
22311139
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CATHODOLUMINESCENCE; GALLIUM NITRIDES; HELIUM; INDIUM COMPOUNDS; LAYERS; PLASTICS; QUANTUM WELLS; RED SHIFT; RELAXATION; SPECTROSCOPY; STRAINS; SURFACES; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de, Müller, Marcus, Veit, Peter, Bertram, Frank, Christen, Jürgen, Glauser, Marlene, Carlin, Jean-François, Cosendey, Gatien, Butté, Raphaël, and Grandjean, Nicolas. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence. United States: N. p., 2014. Web. doi:10.1063/1.4890670.
Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de, Müller, Marcus, Veit, Peter, Bertram, Frank, Christen, Jürgen, Glauser, Marlene, Carlin, Jean-François, Cosendey, Gatien, Butté, Raphaël, & Grandjean, Nicolas. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence. United States. doi:10.1063/1.4890670.
Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de, Müller, Marcus, Veit, Peter, Bertram, Frank, Christen, Jürgen, Glauser, Marlene, Carlin, Jean-François, Cosendey, Gatien, Butté, Raphaël, and Grandjean, Nicolas. Mon . "Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence". United States. doi:10.1063/1.4890670.
@article{osti_22311139,
title = {Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence},
author = {Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de and Müller, Marcus and Veit, Peter and Bertram, Frank and Christen, Jürgen and Glauser, Marlene and Carlin, Jean-François and Cosendey, Gatien and Butté, Raphaël and Grandjean, Nicolas},
abstractNote = {Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.},
doi = {10.1063/1.4890670},
journal = {Applied Physics Letters},
number = 3,
volume = 105,
place = {United States},
year = {Mon Jul 21 00:00:00 EDT 2014},
month = {Mon Jul 21 00:00:00 EDT 2014}
}