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Title: Specific heat of twisted bilayer graphene: Engineering phonons by atomic plane rotations

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4890622· OSTI ID:22311130
 [1];  [1]
  1. E. Pokatilov Laboratory of Physics and Engineering of Nanomaterials, Department of Physics and Engineering, Moldova State University, Chisinau MD-2009, Republic of Moldova (Moldova, Republic of)

We have studied the phonon specific heat in single-layer, bilayer, and twisted bilayer graphene. The calculations were performed using the Born-von Karman model of lattice dynamics for intralayer atomic interactions and spherically symmetric interatomic potential for interlayer interactions. We found that at temperature T < 15 K, specific heat varies with temperature as T{sup n}, where n = 1 for graphene, n = 1.6 for bilayer graphene, and n = 1.3 for the twisted bilayer graphene. The phonon specific heat reveals an intriguing dependence on the twist angle in bilayer graphene, which is particularly pronounced at low temperature. The results suggest a possibility of phonon engineering of thermal properties of layered materials by twisting the atomic planes.

OSTI ID:
22311130
Journal Information:
Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English