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Title: Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition

Abstract

The band alignment between Ga-face GaN and atomic-layer-deposited ZrO{sub 2} was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO{sub 2} layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 1 ± 0.2 eV and conduction band discontinuity ΔE{sub C} of 1.2 ± 0.2 eV at ZrO{sub 2}/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO{sub 2} layer into account.

Authors:
; ; ; ; ;  [1];  [2]
  1. Novitas, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
  2. Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore)
Publication Date:
OSTI Identifier:
22311080
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; GALLIUM NITRIDES; INTERFACES; LAYERS; NUMERICAL SOLUTION; SURFACES; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM OXIDES

Citation Formats

Ye, Gang, Wang, Hong, E-mail: ewanghong@ntu.edu.sg, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Ang, Kian Siong, and Liu, Zhi Hong. Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition. United States: N. p., 2014. Web. doi:10.1063/1.4890470.
Ye, Gang, Wang, Hong, E-mail: ewanghong@ntu.edu.sg, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Ang, Kian Siong, & Liu, Zhi Hong. Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition. United States. doi:10.1063/1.4890470.
Ye, Gang, Wang, Hong, E-mail: ewanghong@ntu.edu.sg, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Ang, Kian Siong, and Liu, Zhi Hong. Mon . "Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition". United States. doi:10.1063/1.4890470.
@article{osti_22311080,
title = {Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition},
author = {Ye, Gang and Wang, Hong, E-mail: ewanghong@ntu.edu.sg and Arulkumaran, Subramaniam and Ng, Geok Ing and Li, Yang and Ang, Kian Siong and Liu, Zhi Hong},
abstractNote = {The band alignment between Ga-face GaN and atomic-layer-deposited ZrO{sub 2} was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO{sub 2} layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 1 ± 0.2 eV and conduction band discontinuity ΔE{sub C} of 1.2 ± 0.2 eV at ZrO{sub 2}/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO{sub 2} layer into account.},
doi = {10.1063/1.4890470},
journal = {Applied Physics Letters},
number = 2,
volume = 105,
place = {United States},
year = {Mon Jul 14 00:00:00 EDT 2014},
month = {Mon Jul 14 00:00:00 EDT 2014}
}