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Title: Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

Abstract

The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO{sub 2} (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

Authors:
;  [1]
  1. Department of Chemical and Biomolecular Engineering, University of Illinois, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
22311070
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEFECTS; EFFICIENCY; ELECTRIC FIELDS; EQUIPMENT; INJECTION; OXYGEN; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SIMULATION; SPATIAL DISTRIBUTION; SURFACES; TITANIUM OXIDES; VALLEYS

Citation Formats

Gorai, Prashun, and Seebauer, Edmund G., E-mail: eseebaue@illinois.edu. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces. United States: N. p., 2014. Web. doi:10.1063/1.4890472.
Gorai, Prashun, & Seebauer, Edmund G., E-mail: eseebaue@illinois.edu. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces. United States. doi:10.1063/1.4890472.
Gorai, Prashun, and Seebauer, Edmund G., E-mail: eseebaue@illinois.edu. Mon . "Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces". United States. doi:10.1063/1.4890472.
@article{osti_22311070,
title = {Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces},
author = {Gorai, Prashun and Seebauer, Edmund G., E-mail: eseebaue@illinois.edu},
abstractNote = {The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO{sub 2} (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.},
doi = {10.1063/1.4890472},
journal = {Applied Physics Letters},
number = 2,
volume = 105,
place = {United States},
year = {Mon Jul 14 00:00:00 EDT 2014},
month = {Mon Jul 14 00:00:00 EDT 2014}
}
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