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Title: Dynamic grazing incidence fast atom diffraction during molecular beam epitaxial growth of GaAs

Abstract

A Grazing Incidence Fast Atom Diffraction (GIFAD) system has been mounted on a commercial molecular beam epitaxy chamber and used to monitor GaAs growth in real-time. In contrast to the conventionally used Reflection High Energy Electron Diffraction, all the GIFAD diffraction orders oscillate in phase, with the change in intensity related to diffuse scattering at step edges. We show that the scattered intensity integrated over the Laue circle is a robust method to monitor the periodic change in surface roughness during layer-by-layer growth, with oscillation phase and amplitude independent of incidence angle and crystal orientation. When there is a change in surface reconstruction at the start of growth, GIFAD intensity oscillations show that there is a corresponding delay in the onset of layer-by-layer growth. In addition, changes in the relative intensity of different diffraction orders have been observed during growth showing that GIFAD has the potential to provide insight into the preferential adatom attachment sites on the surface reconstruction during growth.

Authors:
;  [1];  [2];  [3];  [2]; ; ; ; ;  [4];  [4];  [2]
  1. Sorbonne Universités, UPMC Univ. Paris 06, UMR 7588, INSP, F-75005 Paris (France)
  2. (France)
  3. CNRS, UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, F-75005 Paris (France)
  4. ISMO UMR8214 CNRS-Université Paris-Sud, Orsay F-91400 (France)
Publication Date:
OSTI Identifier:
22311068
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; CRYSTAL GROWTH; CRYSTALS; DIFFUSE SCATTERING; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; INCIDENCE ANGLE; LAYERS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; PERIODICITY; REFLECTION; ROUGHNESS; SURFACES

Citation Formats

Atkinson, P., E-mail: atkinson@insp.jussieu.fr, Eddrief, M., CNRS, UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, F-75005 Paris, Etgens, V. H., VeDeCom-Université Versailles Saint-Quentin en Yvelines, Versailles, Khemliche, H., E-mail: hocine.khemliche@u-psud.fr, Debiossac, M., Mulier, M., Lalmi, B., Roncin, P., Momeni, A., and Univ. Cergy Pontoise, F-95031 Cergy. Dynamic grazing incidence fast atom diffraction during molecular beam epitaxial growth of GaAs. United States: N. p., 2014. Web. doi:10.1063/1.4890121.
Atkinson, P., E-mail: atkinson@insp.jussieu.fr, Eddrief, M., CNRS, UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, F-75005 Paris, Etgens, V. H., VeDeCom-Université Versailles Saint-Quentin en Yvelines, Versailles, Khemliche, H., E-mail: hocine.khemliche@u-psud.fr, Debiossac, M., Mulier, M., Lalmi, B., Roncin, P., Momeni, A., & Univ. Cergy Pontoise, F-95031 Cergy. Dynamic grazing incidence fast atom diffraction during molecular beam epitaxial growth of GaAs. United States. doi:10.1063/1.4890121.
Atkinson, P., E-mail: atkinson@insp.jussieu.fr, Eddrief, M., CNRS, UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, F-75005 Paris, Etgens, V. H., VeDeCom-Université Versailles Saint-Quentin en Yvelines, Versailles, Khemliche, H., E-mail: hocine.khemliche@u-psud.fr, Debiossac, M., Mulier, M., Lalmi, B., Roncin, P., Momeni, A., and Univ. Cergy Pontoise, F-95031 Cergy. Mon . "Dynamic grazing incidence fast atom diffraction during molecular beam epitaxial growth of GaAs". United States. doi:10.1063/1.4890121.
@article{osti_22311068,
title = {Dynamic grazing incidence fast atom diffraction during molecular beam epitaxial growth of GaAs},
author = {Atkinson, P., E-mail: atkinson@insp.jussieu.fr and Eddrief, M. and CNRS, UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, F-75005 Paris and Etgens, V. H. and VeDeCom-Université Versailles Saint-Quentin en Yvelines, Versailles and Khemliche, H., E-mail: hocine.khemliche@u-psud.fr and Debiossac, M. and Mulier, M. and Lalmi, B. and Roncin, P. and Momeni, A. and Univ. Cergy Pontoise, F-95031 Cergy},
abstractNote = {A Grazing Incidence Fast Atom Diffraction (GIFAD) system has been mounted on a commercial molecular beam epitaxy chamber and used to monitor GaAs growth in real-time. In contrast to the conventionally used Reflection High Energy Electron Diffraction, all the GIFAD diffraction orders oscillate in phase, with the change in intensity related to diffuse scattering at step edges. We show that the scattered intensity integrated over the Laue circle is a robust method to monitor the periodic change in surface roughness during layer-by-layer growth, with oscillation phase and amplitude independent of incidence angle and crystal orientation. When there is a change in surface reconstruction at the start of growth, GIFAD intensity oscillations show that there is a corresponding delay in the onset of layer-by-layer growth. In addition, changes in the relative intensity of different diffraction orders have been observed during growth showing that GIFAD has the potential to provide insight into the preferential adatom attachment sites on the surface reconstruction during growth.},
doi = {10.1063/1.4890121},
journal = {Applied Physics Letters},
number = 2,
volume = 105,
place = {United States},
year = {Mon Jul 14 00:00:00 EDT 2014},
month = {Mon Jul 14 00:00:00 EDT 2014}
}