High electron mobility thin-film transistors based on Ga{sub 2}O{sub 3} grown by atmospheric ultrasonic spray pyrolysis at low temperatures
- Department of Engineering, Engineering Building, Lancaster University, Bailrigg, Lancaster LA1 4YR (United Kingdom)
- Institute of Chemical Engineering and High Temperature Processes (ICEHT), Foundation of Research and Technology Hellas (FORTH), Stadiou Strasse Platani, P.O. Box 1414, Patras GR-265 04 (Greece)
- Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), Heraklion 71003 (Greece)
- Laboratory of Applied Physics, Department of Physics, Aristotle University of Thessaloniki, Thessaloniki GR-54124 (Greece)
We report on thin-film transistors based on Ga{sub 2}O{sub 3} films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400–450 °C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700 °C) were also investigated. Both as-grown and post-deposition annealed Ga{sub 2}O{sub 3} films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9 eV. Transistors based on as-deposited Ga{sub 2}O{sub 3} films show n-type conductivity with the maximum electron mobility of ∼2 cm{sup 2}/V s.
- OSTI ID:
- 22311019
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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