skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K

Abstract

High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g{sup 2}(τ = 0) = 0.28 ± 0.20 can be tracked up to T = 200 K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device.

Authors:
; ;  [1]; ; ;  [2]
  1. Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg (Germany)
  2. Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, 28334 Bremen (Germany)
Publication Date:
OSTI Identifier:
22311004
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; APERTURES; CADMIUM SELENIDES; ELECTROLUMINESCENCE; EPITAXY; EQUIPMENT; MAGNESIUM SULFIDES; PHOTONS; QUANTUM DOTS; SELENIUM COMPOUNDS; SULFUR COMPOUNDS; TEMPERATURE RANGE 0065-0273 K; ZINC COMPOUNDS

Citation Formats

Quitsch, Wolf, Kümmell, Tilmar, Bacher, Gerd, Gust, Arne, Kruse, Carsten, and Hommel, Detlef. Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K. United States: N. p., 2014. Web. doi:10.1063/1.4894729.
Quitsch, Wolf, Kümmell, Tilmar, Bacher, Gerd, Gust, Arne, Kruse, Carsten, & Hommel, Detlef. Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K. United States. doi:10.1063/1.4894729.
Quitsch, Wolf, Kümmell, Tilmar, Bacher, Gerd, Gust, Arne, Kruse, Carsten, and Hommel, Detlef. Mon . "Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K". United States. doi:10.1063/1.4894729.
@article{osti_22311004,
title = {Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K},
author = {Quitsch, Wolf and Kümmell, Tilmar and Bacher, Gerd and Gust, Arne and Kruse, Carsten and Hommel, Detlef},
abstractNote = {High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g{sup 2}(τ = 0) = 0.28 ± 0.20 can be tracked up to T = 200 K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device.},
doi = {10.1063/1.4894729},
journal = {Applied Physics Letters},
number = 9,
volume = 105,
place = {United States},
year = {Mon Sep 01 00:00:00 EDT 2014},
month = {Mon Sep 01 00:00:00 EDT 2014}
}
  • We demonstrate polarized blue single photon emission up to 200 K from an In{sub 0.2}Ga{sub 0.8}N quantum dot in a single Al{sub 0.1}Ga{sub 0.9}N nanowire. The InGaN/AlGaN dot-in-nanowire heterostructure was grown on (111) silicon by plasma assisted molecular beam epitaxy. Nanowires dispersed on a silicon substrate show sharp exciton and biexciton transitions in the micro-photoluminescence spectra. Second-order correlation measurements performed under pulsed excitation at the biexciton wavelength confirm single photon emission, with a g{sup (2)}(0) of 0.43 at 200 K. The emitted photons have a short radiative lifetime of 0.7 ns and are linearly polarized along the c-axis of themore » nanowire with a degree of polarization of 78%.« less
  • We demonstrate electrically pumped single photon emission up to 150 K from a single InGaN quantum dot embedded in a GaN nanowire junction diode. The InGaN dot-in-nanowire p-n junctions were grown on silicon by molecular beam epitaxy. The exciton electroluminescence from individual dot-in-nanowires is in the green spectral range (λ ∼ 520 nm) and is detectable up to 150 K. Second order autocorrelation measurements performed at the exciton energy at an ambient temperature of 125 K show a background corrected g{sup (2)}(0) equal to 0.35, indicating dominant single photon emission. The steady state nanowire temperature under these conditions is estimatedmore » to be 150 K due to Joule heating induced by the large nanowire series resistance. Time resolved photoluminescence measurements yield an exciton radiative lifetime of 1.1 ns.« less
  • We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ∼1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200 MHz.
  • We demonstrate polarization-induced spectral shifts and associated linearly polarized absorption and emission in single CdSe/oligo-(phenylene vinylene) (CdSe/OPV) nanoparticles. A mechanism for these observations is presented in which charge separation from photoexcited ligands results in a significant Stark distortion of the quantum dot electron/hole wavefunctions. This distortion results in an induced linear polarization and an associated red shift in band-edge photoluminescence. These studies suggest the use of single quantum dots as local charge mobility probes.