Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes
- Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
We investigate the impact of incorporating realistic In profiles in simulations of c-plane InGaN/GaN light-emitting diodes. Simulations based on a drift-diffusion model typically overestimate the onset voltage, but have usually been based on the assumption of ideal quantum wells with a square In profile. We demonstrate that more realistic profiles lead to significant modifications of current-density-versus-voltage characteristics, and explain the effects based on changes in the band diagram and carrier overlap.
- OSTI ID:
- 22310985
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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