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Title: Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

Abstract

The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.

Authors:
; ; ; ; ; ;  [1];  [2];  [3]
  1. Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071 (China)
  2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123 (China)
  3. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi 710071 (China)
Publication Date:
OSTI Identifier:
22310956
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DISLOCATIONS; FILMS; GALLIUM NITRIDES; IMPURITIES; LUMINESCENCE; ORGANOMETALLIC COMPOUNDS; SAPPHIRE; STACKING FAULTS; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Lin, Zhiyu, Zhang, Jincheng, E-mail: jchzhang@xidian.edu.cn, Xu, Shengrui, Chen, Zhibin, Yang, Shuangyong, Tian, Kun, Hao, Yue, Su, Xujun, and Shi, Xuefang. Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition. United States: N. p., 2014. Web. doi:10.1063/1.4894632.
Lin, Zhiyu, Zhang, Jincheng, E-mail: jchzhang@xidian.edu.cn, Xu, Shengrui, Chen, Zhibin, Yang, Shuangyong, Tian, Kun, Hao, Yue, Su, Xujun, & Shi, Xuefang. Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition. United States. doi:10.1063/1.4894632.
Lin, Zhiyu, Zhang, Jincheng, E-mail: jchzhang@xidian.edu.cn, Xu, Shengrui, Chen, Zhibin, Yang, Shuangyong, Tian, Kun, Hao, Yue, Su, Xujun, and Shi, Xuefang. Mon . "Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition". United States. doi:10.1063/1.4894632.
@article{osti_22310956,
title = {Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition},
author = {Lin, Zhiyu and Zhang, Jincheng, E-mail: jchzhang@xidian.edu.cn and Xu, Shengrui and Chen, Zhibin and Yang, Shuangyong and Tian, Kun and Hao, Yue and Su, Xujun and Shi, Xuefang},
abstractNote = {The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.},
doi = {10.1063/1.4894632},
journal = {Applied Physics Letters},
number = 8,
volume = 105,
place = {United States},
year = {Mon Aug 25 00:00:00 EDT 2014},
month = {Mon Aug 25 00:00:00 EDT 2014}
}