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Title: All quantum dot mode-locked semiconductor disk laser emitting at 655 nm

Abstract

We present a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM) with emission in the red spectral range. Both the gain and the absorber structure are fabricated by metal-organic vapor-phase epitaxy in an anti-resonant design using quantum dots as active material. A v-shaped cavity is used to tightly focus onto the SESAM, producing pulses with a duration of about 1 ps at a repetition rate of 852 MHz.

Authors:
; ; ; ; ;  [1]
  1. Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)
Publication Date:
OSTI Identifier:
22310950
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EMISSION; GAIN; MIRRORS; ORGANOMETALLIC COMPOUNDS; PULSES; QUANTUM DOTS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; VAPOR PHASE EPITAXY

Citation Formats

Bek, R., E-mail: r.bek@ihfg.uni-stuttgart.de, Kersteen, G., Kahle, H., Schwarzbäck, T., Jetter, M., and Michler, P. All quantum dot mode-locked semiconductor disk laser emitting at 655 nm. United States: N. p., 2014. Web. doi:10.1063/1.4894182.
Bek, R., E-mail: r.bek@ihfg.uni-stuttgart.de, Kersteen, G., Kahle, H., Schwarzbäck, T., Jetter, M., & Michler, P. All quantum dot mode-locked semiconductor disk laser emitting at 655 nm. United States. doi:10.1063/1.4894182.
Bek, R., E-mail: r.bek@ihfg.uni-stuttgart.de, Kersteen, G., Kahle, H., Schwarzbäck, T., Jetter, M., and Michler, P. Mon . "All quantum dot mode-locked semiconductor disk laser emitting at 655 nm". United States. doi:10.1063/1.4894182.
@article{osti_22310950,
title = {All quantum dot mode-locked semiconductor disk laser emitting at 655 nm},
author = {Bek, R., E-mail: r.bek@ihfg.uni-stuttgart.de and Kersteen, G. and Kahle, H. and Schwarzbäck, T. and Jetter, M. and Michler, P.},
abstractNote = {We present a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM) with emission in the red spectral range. Both the gain and the absorber structure are fabricated by metal-organic vapor-phase epitaxy in an anti-resonant design using quantum dots as active material. A v-shaped cavity is used to tightly focus onto the SESAM, producing pulses with a duration of about 1 ps at a repetition rate of 852 MHz.},
doi = {10.1063/1.4894182},
journal = {Applied Physics Letters},
number = 8,
volume = 105,
place = {United States},
year = {Mon Aug 25 00:00:00 EDT 2014},
month = {Mon Aug 25 00:00:00 EDT 2014}
}