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Title: Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air

Abstract

The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10{sup −5} Ω-cm{sup 2}. In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 °C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient.

Authors:
 [1];  [1];  [2]
  1. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22310946
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRONIC EQUIPMENT; GALLIUM NITRIDES; GOLD; HEAT STORAGE; LAYERS; MICROSTRUCTURE; OXIDATION; PLATINUM; ROUGHNESS; SURFACES; TEMPERATURE RANGE 0400-1000 K; TITANIUM

Citation Formats

Hou, Minmin, E-mail: mmhou@stanford.edu, Senesky, Debbie G., and Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305. Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air. United States: N. p., 2014. Web. doi:10.1063/1.4894290.
Hou, Minmin, E-mail: mmhou@stanford.edu, Senesky, Debbie G., & Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305. Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air. United States. doi:10.1063/1.4894290.
Hou, Minmin, E-mail: mmhou@stanford.edu, Senesky, Debbie G., and Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305. Mon . "Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air". United States. doi:10.1063/1.4894290.
@article{osti_22310946,
title = {Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air},
author = {Hou, Minmin, E-mail: mmhou@stanford.edu and Senesky, Debbie G. and Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305},
abstractNote = {The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10{sup −5} Ω-cm{sup 2}. In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 °C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient.},
doi = {10.1063/1.4894290},
journal = {Applied Physics Letters},
number = 8,
volume = 105,
place = {United States},
year = {Mon Aug 25 00:00:00 EDT 2014},
month = {Mon Aug 25 00:00:00 EDT 2014}
}