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Title: Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

Abstract

In order to understand and predict the behavior of future scandium nitride (ScN) semiconductor heterostructure devices, we have utilized in situ x-ray and ultra-violet photoelectron spectroscopy to determine the valence band offset (VBO) present at ScN/3C-SiC (111) and 2H-GaN (0001)/ScN (111) interfaces formed by ammonia gas source molecular beam epitaxy. The ScN/3C-SiC (111) VBO was dependent on the ScN growth temperature and resistivity. VBOs of 0.4 ± 0.1 and 0.1 ± 0.1 eV were, respectively, determined for ScN grown at 925 °C (low resistivity) and 800 °C (high resistivity). Using the band-gaps of 1.6 ± 0.2 and 1.4 ± 0.2 eV previously determined by reflection electron energy loss spectroscopy for the 925 and 800 °C ScN films, the respective conduction band offsets (CBO) for these interfaces were 0.4 ± 0.2 and 0.9 ± 0.2 eV. For a GaN (0001) interface with 925 °C ScN (111), the VBO and CBO were similarly determined to be 0.9 ± 0.1 and 0.9 ± 0.2 eV, respectively.

Authors:
 [1];  [2];  [3];  [2];  [1];  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
  2. (United States)
  3. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)
Publication Date:
OSTI Identifier:
22310943
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMMONIA; ELECTRONS; ENERGY-LOSS SPECTROSCOPY; EQUIPMENT; EV RANGE; FILMS; GALLIUM NITRIDES; INTERFACES; MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; REFLECTION; SCANDIUM; SCANDIUM NITRIDES; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; VALENCE; X RADIATION

Citation Formats

King, Sean W., E-mail: sean.king@intel.com, Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124, Nemanich, Robert J., Department of Physics, Arizona State University, Tempe, Arizona 85281, Davis, Robert F., and Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213. Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001). United States: N. p., 2014. Web. doi:10.1063/1.4894010.
King, Sean W., E-mail: sean.king@intel.com, Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124, Nemanich, Robert J., Department of Physics, Arizona State University, Tempe, Arizona 85281, Davis, Robert F., & Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213. Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001). United States. doi:10.1063/1.4894010.
King, Sean W., E-mail: sean.king@intel.com, Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124, Nemanich, Robert J., Department of Physics, Arizona State University, Tempe, Arizona 85281, Davis, Robert F., and Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213. Mon . "Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)". United States. doi:10.1063/1.4894010.
@article{osti_22310943,
title = {Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)},
author = {King, Sean W., E-mail: sean.king@intel.com and Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 and Nemanich, Robert J. and Department of Physics, Arizona State University, Tempe, Arizona 85281 and Davis, Robert F. and Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213},
abstractNote = {In order to understand and predict the behavior of future scandium nitride (ScN) semiconductor heterostructure devices, we have utilized in situ x-ray and ultra-violet photoelectron spectroscopy to determine the valence band offset (VBO) present at ScN/3C-SiC (111) and 2H-GaN (0001)/ScN (111) interfaces formed by ammonia gas source molecular beam epitaxy. The ScN/3C-SiC (111) VBO was dependent on the ScN growth temperature and resistivity. VBOs of 0.4 ± 0.1 and 0.1 ± 0.1 eV were, respectively, determined for ScN grown at 925 °C (low resistivity) and 800 °C (high resistivity). Using the band-gaps of 1.6 ± 0.2 and 1.4 ± 0.2 eV previously determined by reflection electron energy loss spectroscopy for the 925 and 800 °C ScN films, the respective conduction band offsets (CBO) for these interfaces were 0.4 ± 0.2 and 0.9 ± 0.2 eV. For a GaN (0001) interface with 925 °C ScN (111), the VBO and CBO were similarly determined to be 0.9 ± 0.1 and 0.9 ± 0.2 eV, respectively.},
doi = {10.1063/1.4894010},
journal = {Applied Physics Letters},
number = 8,
volume = 105,
place = {United States},
year = {Mon Aug 25 00:00:00 EDT 2014},
month = {Mon Aug 25 00:00:00 EDT 2014}
}