Refractive index of erbium doped GaN thin films

Journal Article · Mon Aug 25 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4893992· OSTI ID:22310932

Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Zavada, J. M. ^[1]

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1. Department of Electrical and Computer Engineering, Polytechnic Institute of New York University, Brooklyn, New York 11201 (United States)

GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

• OSTI ID: 22310932
• Journal Information: Applied Physics Letters, Vol. 105, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
ELLIPSOMETRY
EMISSION
ERBIUM ADDITIONS
GALLIUM NITRIDES
LINE WIDTHS
LOSSES
NEUTRON DIFFRACTION
ORGANOMETALLIC COMPOUNDS
REFRACTIVE INDEX
SAPPHIRE
SUBSTRATES
THIN FILMS
WAVELENGTHS
X-RAY DIFFRACTION