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Title: Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

Abstract

In this paper, we report the alleviation of the Fermi-level pinning on metal/n-germanium (Ge) contact by the insertion of multiple layers of single-layer graphene (SLG) at the metal/n-Ge interface. A decrease in the Schottky barrier height with an increase in the number of inserted SLG layers was observed, which supports the contention that Fermi-level pinning at metal/n-Ge contact originates from the metal-induced gap states at the metal/n-Ge interface. The modulation of Schottky barrier height by varying the number of inserted SLG layers (m) can bring about the use of Ge as the next-generation complementary metal-oxide-semiconductor material. Furthermore, the inserted SLG layers can be used as the tunnel barrier for spin injection into Ge substrate for spin-based transistors.

Authors:
; ; ; ; ; ;  [1]; ;  [2];  [3]
  1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
  2. Division of Materials Science, Korea Basic Science Institute (KBSI), 169-148 Daehak-ro, Yuseong-gu, Daejeon 305-333 (Korea, Republic of)
  3. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22310921
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; FERMI LEVEL; GERMANIUM; GRAPHENE; INJECTION; INTERFACES; LAYERS; MODULATION; OXIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SPIN; SUBSTRATES; TRANSISTORS; TUNNEL EFFECT

Citation Formats

Baek, Seung-heon Chris, Seo, Yu-Jin, Oh, Joong Gun, Albert Park, Min Gyu, Bong, Jae Hoon, Yoon, Seong Jun, Lee, Seok-Hee, E-mail: seokheelee@ee.kaist.ac.kr, Seo, Minsu, Park, Seung-young, and Park, Byong-Guk. Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers. United States: N. p., 2014. Web. doi:10.1063/1.4893668.
Baek, Seung-heon Chris, Seo, Yu-Jin, Oh, Joong Gun, Albert Park, Min Gyu, Bong, Jae Hoon, Yoon, Seong Jun, Lee, Seok-Hee, E-mail: seokheelee@ee.kaist.ac.kr, Seo, Minsu, Park, Seung-young, & Park, Byong-Guk. Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers. United States. doi:10.1063/1.4893668.
Baek, Seung-heon Chris, Seo, Yu-Jin, Oh, Joong Gun, Albert Park, Min Gyu, Bong, Jae Hoon, Yoon, Seong Jun, Lee, Seok-Hee, E-mail: seokheelee@ee.kaist.ac.kr, Seo, Minsu, Park, Seung-young, and Park, Byong-Guk. Mon . "Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers". United States. doi:10.1063/1.4893668.
@article{osti_22310921,
title = {Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers},
author = {Baek, Seung-heon Chris and Seo, Yu-Jin and Oh, Joong Gun and Albert Park, Min Gyu and Bong, Jae Hoon and Yoon, Seong Jun and Lee, Seok-Hee, E-mail: seokheelee@ee.kaist.ac.kr and Seo, Minsu and Park, Seung-young and Park, Byong-Guk},
abstractNote = {In this paper, we report the alleviation of the Fermi-level pinning on metal/n-germanium (Ge) contact by the insertion of multiple layers of single-layer graphene (SLG) at the metal/n-Ge interface. A decrease in the Schottky barrier height with an increase in the number of inserted SLG layers was observed, which supports the contention that Fermi-level pinning at metal/n-Ge contact originates from the metal-induced gap states at the metal/n-Ge interface. The modulation of Schottky barrier height by varying the number of inserted SLG layers (m) can bring about the use of Ge as the next-generation complementary metal-oxide-semiconductor material. Furthermore, the inserted SLG layers can be used as the tunnel barrier for spin injection into Ge substrate for spin-based transistors.},
doi = {10.1063/1.4893668},
journal = {Applied Physics Letters},
number = 7,
volume = 105,
place = {United States},
year = {Mon Aug 18 00:00:00 EDT 2014},
month = {Mon Aug 18 00:00:00 EDT 2014}
}