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Title: Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS{sub 2}/graphene hetero-structures by chemical vapor depositions

Abstract

Uniform large-size MoS{sub 2}/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS{sub 2}/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS{sub 2}/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS{sub 2}/graphene are achieved by CVD fabrication of graphene layers on top of the MoS{sub 2}, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications.

Authors:
 [1];  [2];  [3];  [4]; ;  [5];  [1];  [1];  [2];  [2]
  1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China)
  2. (China)
  3. Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China)
  4. Institute of Display, National Chiao-Tung University, Hsinchu, Taiwan (China)
  5. Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China)
Publication Date:
OSTI Identifier:
22310916
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CRYSTALS; ELECTRONS; EPITAXY; FERMI LEVEL; GRAPHENE; LAYERS; MOLYBDENUM SULFIDES; RESOLUTION; SAPPHIRE; SUBSTRATES; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Lin, Meng-Yu, Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan, Chang, Chung-En, Wang, Cheng-Hung, Su, Chen-Fung, Chen, Chi, Lee, Si-Chen, Lin, Shih-Yen, E-mail: shihyen@gate.sinica.edu.tw, Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan, and Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan. Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS{sub 2}/graphene hetero-structures by chemical vapor depositions. United States: N. p., 2014. Web. doi:10.1063/1.4893448.
Lin, Meng-Yu, Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan, Chang, Chung-En, Wang, Cheng-Hung, Su, Chen-Fung, Chen, Chi, Lee, Si-Chen, Lin, Shih-Yen, E-mail: shihyen@gate.sinica.edu.tw, Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan, & Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan. Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS{sub 2}/graphene hetero-structures by chemical vapor depositions. United States. doi:10.1063/1.4893448.
Lin, Meng-Yu, Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan, Chang, Chung-En, Wang, Cheng-Hung, Su, Chen-Fung, Chen, Chi, Lee, Si-Chen, Lin, Shih-Yen, E-mail: shihyen@gate.sinica.edu.tw, Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan, and Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan. Mon . "Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS{sub 2}/graphene hetero-structures by chemical vapor depositions". United States. doi:10.1063/1.4893448.
@article{osti_22310916,
title = {Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS{sub 2}/graphene hetero-structures by chemical vapor depositions},
author = {Lin, Meng-Yu and Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan and Chang, Chung-En and Wang, Cheng-Hung and Su, Chen-Fung and Chen, Chi and Lee, Si-Chen and Lin, Shih-Yen, E-mail: shihyen@gate.sinica.edu.tw and Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan and Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan},
abstractNote = {Uniform large-size MoS{sub 2}/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS{sub 2}/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS{sub 2}/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS{sub 2}/graphene are achieved by CVD fabrication of graphene layers on top of the MoS{sub 2}, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications.},
doi = {10.1063/1.4893448},
journal = {Applied Physics Letters},
number = 7,
volume = 105,
place = {United States},
year = {Mon Aug 18 00:00:00 EDT 2014},
month = {Mon Aug 18 00:00:00 EDT 2014}
}