Unexpected magnetization enhancement in hydrogen plasma treated ferromagnetic (Zn,Cu)O film
- State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China and Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China)
The effects of H{sup +} incorporation on oxygen vacancies (H{sub O}{sup +}) on the giant ferromagnetic behavior (moment up to 3.26 μ{sub B}/Cu) in ZnO:Cu polycrystalline films have been closely examined using different microstructural and magnetic characterization tools. Fine thermal stability (up to 450 °C) and low resistivity demonstrate a significant correlation between Cu 3d-states and H{sub O}{sup +} donor defects in H plasma treated ZnO:Cu films, analogous to dual-donor (V{sub O} and Zn{sub i}) defects mediated case. These H{sub O}{sup +} donors can delocalize their electrons to the orbits of Cu atoms and contribute to a stronger spin-orbit coupling interaction. Suitable H{sub O}{sup +} defect concentration and matched proportion between Cu{sup 2+} and Cu{sup +} species ensure that orbital momentum shall not be quenched. Hence, unexpected moment enhancement, less than spin-orbit coupling upper limit (3.55 μ{sub B}/Cu), can be also expected in this scenario. The manipulation from spin-only to spin-orbit coupling mode, using a facile thermally-mediated H plasma exposure way, will allow achieving spin transport based diluted magnetic semiconductor device.
- OSTI ID:
- 22310897
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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