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Title: Spin-torque diode radio-frequency detector with voltage tuned resonance

Abstract

We report on a voltage-tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and insulating layers. The applied bias voltage is shown to have a significant influence on the magnetic anisotropy, and thus on the resonance frequency of the device. This influence also depends on the voltage polarity. The obtained results are accounted for in terms of the interplay of spin-transfer-torque and voltage-controlled magnetic anisotropy effects.

Authors:
; ;  [1];  [1];  [2];  [3];  [4];  [5];  [4]
  1. AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland)
  2. (Germany)
  3. Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw (Poland)
  4. (Poland)
  5. Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland)
Publication Date:
OSTI Identifier:
22310892
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; ELECTRIC POTENTIAL; EQUIPMENT; INTERFACES; LAYERS; MAGNETIC PROPERTIES; OSCILLATIONS; RADIATION DETECTORS; RADIOWAVE RADIATION; RESONANCE; SPIN; TORQUE; TUNNEL EFFECT

Citation Formats

Skowroński, Witold, E-mail: skowron@agh.edu.pl, Frankowski, Marek, Stobiecki, Tomasz, Wrona, Jerzy, Singulus Technologies, Kahl am Main 63796, Ogrodnik, Piotr, AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków, Barnaś, Józef, and Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań. Spin-torque diode radio-frequency detector with voltage tuned resonance. United States: N. p., 2014. Web. doi:10.1063/1.4893463.
Skowroński, Witold, E-mail: skowron@agh.edu.pl, Frankowski, Marek, Stobiecki, Tomasz, Wrona, Jerzy, Singulus Technologies, Kahl am Main 63796, Ogrodnik, Piotr, AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków, Barnaś, Józef, & Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań. Spin-torque diode radio-frequency detector with voltage tuned resonance. United States. doi:10.1063/1.4893463.
Skowroński, Witold, E-mail: skowron@agh.edu.pl, Frankowski, Marek, Stobiecki, Tomasz, Wrona, Jerzy, Singulus Technologies, Kahl am Main 63796, Ogrodnik, Piotr, AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków, Barnaś, Józef, and Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań. Mon . "Spin-torque diode radio-frequency detector with voltage tuned resonance". United States. doi:10.1063/1.4893463.
@article{osti_22310892,
title = {Spin-torque diode radio-frequency detector with voltage tuned resonance},
author = {Skowroński, Witold, E-mail: skowron@agh.edu.pl and Frankowski, Marek and Stobiecki, Tomasz and Wrona, Jerzy and Singulus Technologies, Kahl am Main 63796 and Ogrodnik, Piotr and AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków and Barnaś, Józef and Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań},
abstractNote = {We report on a voltage-tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and insulating layers. The applied bias voltage is shown to have a significant influence on the magnetic anisotropy, and thus on the resonance frequency of the device. This influence also depends on the voltage polarity. The obtained results are accounted for in terms of the interplay of spin-transfer-torque and voltage-controlled magnetic anisotropy effects.},
doi = {10.1063/1.4893463},
journal = {Applied Physics Letters},
number = 7,
volume = 105,
place = {United States},
year = {Mon Aug 18 00:00:00 EDT 2014},
month = {Mon Aug 18 00:00:00 EDT 2014}
}