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Title: Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes

Abstract

We developed a laser lift-off technique for a freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN. A combination of an In droplet formed by thermal decomposition of GaInN during growth and a pulsed second-harmonic neodymium-doped yttrium aluminum garnet laser (λ = 532 nm) realized the lift-off GaN substrate. After laser lift-off of the GaN substrate, it was used to achieve 380 nm ultraviolet light-emitting diodes with light output enhanced 1.7-fold. In this way, the light extraction can be improved by removing the GaN substrate.

Authors:
; ; ; ; ; ;  [1];  [1];  [2]
  1. Faculty of Science and Technology, Meijo University, Nagoya 468-8502 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22310880
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; CRYSTAL GROWTH; DOPED MATERIALS; DROPLETS; ELEVATORS; EXTRACTION; GALLIUM NITRIDES; GARNETS; INDIUM COMPOUNDS; LASER RADIATION; LIGHT EMITTING DIODES; PYROLYSIS; SUBSTRATES; ULTRAVIOLET RADIATION; VISIBLE RADIATION

Citation Formats

Iida, Daisuke, E-mail: dft0tfi16@meijo-u.ac.jp, Kawai, Syunsuke, Ema, Nobuaki, Tsuchiya, Takayoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, and Akasaki Research Center, Nagoya University, Nagoya 464-8603. Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes. United States: N. p., 2014. Web. doi:10.1063/1.4893757.
Iida, Daisuke, E-mail: dft0tfi16@meijo-u.ac.jp, Kawai, Syunsuke, Ema, Nobuaki, Tsuchiya, Takayoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, & Akasaki Research Center, Nagoya University, Nagoya 464-8603. Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes. United States. doi:10.1063/1.4893757.
Iida, Daisuke, E-mail: dft0tfi16@meijo-u.ac.jp, Kawai, Syunsuke, Ema, Nobuaki, Tsuchiya, Takayoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, and Akasaki Research Center, Nagoya University, Nagoya 464-8603. Mon . "Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes". United States. doi:10.1063/1.4893757.
@article{osti_22310880,
title = {Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes},
author = {Iida, Daisuke, E-mail: dft0tfi16@meijo-u.ac.jp and Kawai, Syunsuke and Ema, Nobuaki and Tsuchiya, Takayoshi and Iwaya, Motoaki and Takeuchi, Tetsuya and Kamiyama, Satoshi and Akasaki, Isamu and Akasaki Research Center, Nagoya University, Nagoya 464-8603},
abstractNote = {We developed a laser lift-off technique for a freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN. A combination of an In droplet formed by thermal decomposition of GaInN during growth and a pulsed second-harmonic neodymium-doped yttrium aluminum garnet laser (λ = 532 nm) realized the lift-off GaN substrate. After laser lift-off of the GaN substrate, it was used to achieve 380 nm ultraviolet light-emitting diodes with light output enhanced 1.7-fold. In this way, the light extraction can be improved by removing the GaN substrate.},
doi = {10.1063/1.4893757},
journal = {Applied Physics Letters},
number = 7,
volume = 105,
place = {United States},
year = {Mon Aug 18 00:00:00 EDT 2014},
month = {Mon Aug 18 00:00:00 EDT 2014}
}