Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

Journal Article · Mon Jul 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4887140· OSTI ID:22308714

Hertog, M. den; Songmuang, R.; Donatini, F.; Si Dang, Le ^[1]; Bellet-Amalric, E.; Monroy, E. ^[1]

---

1. Université Grenoble Alpes, 38000 Grenoble (France)

We report on the identification of an optimum deposited amount of AlGaN in AlGaN/AlN quantum dot (QD) superlattices grown by molecular-beam epitaxy, which grants maximum luminescence at room temperature by finding a compromise between the designs providing maximum internal quantum efficiency (60%) and maximum QD density (9.0 × 10{sup 11 }cm{sup −2}). The average Al composition in the QDs is estimated at 10.6% ± 0.8% by combining x-ray diffraction measurements with three-dimensional calculations of the strain distribution. The effect of the variation of the QD height/base-diameter ratio on the interband and intraband optical properties was explored by fitting the experimental data with three-dimensional calculations of the band diagram and quantum confined states.

• OSTI ID: 22308714
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
DISTRIBUTION
ELECTRONIC STRUCTURE
GALLIUM COMPOUNDS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
QUANTUM DOTS
QUANTUM EFFICIENCY
STRAINS
SUPERLATTICES
TEMPERATURE RANGE 0273-0400 K
ULTRAVIOLET RADIATION
X-RAY DIFFRACTION