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Title: A prototype silicon double quantum dot with dispersive microwave readout

Abstract

We present a unique design and fabrication process for a lateral, gate-confined double quantum dot in an accumulation mode metal-oxide-semiconductor (MOS) structure coupled to an integrated microwave resonator. All electrostatic gates for the double quantum dot are contained in a single metal layer, and use of the MOS structure allows for control of the location of the two-dimensional electron gas via the location of the accumulation gates. Numerical simulations of the electrostatic confinement potential are performed along with an estimate of the coupling of the double quantum dot to the microwave resonator. Prototype devices are fabricated and characterized by transport measurements of electron confinement and reflectometry measurements of the microwave resonator.

Authors:
; ; ;  [1]; ; ; ;  [2];  [3];  [4]; ;  [5];  [6]
  1. Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley, California 94720 (United States)
  2. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
  3. Department of Physics, University of California, Berkeley, California 94720 (United States)
  4. (United States)
  5. Department of Chemistry, University of California, Berkeley, California 94720 (United States)
  6. Accelerator and Fusion Research Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22308560
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; COUPLING; ELECTRON GAS; LAYERS; METALS; MICROWAVE RADIATION; QUANTUM DOTS; READOUT SYSTEMS; RESONATORS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Schmidt, A. R., E-mail: andrewrobertschmidt@gmail.com, Henry, E., Namaan, O., Siddiqi, I., E-mail: irfan-siddiqi@berkeley.edu, Lo, C. C., Wang, Y.-T., Bokor, J., Yablonovitch, E., Li, H., Department of Chemistry, University of California, Berkeley, California 94720, Greenman, L., Whaley, K. B., and Schenkel, T.. A prototype silicon double quantum dot with dispersive microwave readout. United States: N. p., 2014. Web. doi:10.1063/1.4890835.
Schmidt, A. R., E-mail: andrewrobertschmidt@gmail.com, Henry, E., Namaan, O., Siddiqi, I., E-mail: irfan-siddiqi@berkeley.edu, Lo, C. C., Wang, Y.-T., Bokor, J., Yablonovitch, E., Li, H., Department of Chemistry, University of California, Berkeley, California 94720, Greenman, L., Whaley, K. B., & Schenkel, T.. A prototype silicon double quantum dot with dispersive microwave readout. United States. doi:10.1063/1.4890835.
Schmidt, A. R., E-mail: andrewrobertschmidt@gmail.com, Henry, E., Namaan, O., Siddiqi, I., E-mail: irfan-siddiqi@berkeley.edu, Lo, C. C., Wang, Y.-T., Bokor, J., Yablonovitch, E., Li, H., Department of Chemistry, University of California, Berkeley, California 94720, Greenman, L., Whaley, K. B., and Schenkel, T.. Mon . "A prototype silicon double quantum dot with dispersive microwave readout". United States. doi:10.1063/1.4890835.
@article{osti_22308560,
title = {A prototype silicon double quantum dot with dispersive microwave readout},
author = {Schmidt, A. R., E-mail: andrewrobertschmidt@gmail.com and Henry, E. and Namaan, O. and Siddiqi, I., E-mail: irfan-siddiqi@berkeley.edu and Lo, C. C. and Wang, Y.-T. and Bokor, J. and Yablonovitch, E. and Li, H. and Department of Chemistry, University of California, Berkeley, California 94720 and Greenman, L. and Whaley, K. B. and Schenkel, T.},
abstractNote = {We present a unique design and fabrication process for a lateral, gate-confined double quantum dot in an accumulation mode metal-oxide-semiconductor (MOS) structure coupled to an integrated microwave resonator. All electrostatic gates for the double quantum dot are contained in a single metal layer, and use of the MOS structure allows for control of the location of the two-dimensional electron gas via the location of the accumulation gates. Numerical simulations of the electrostatic confinement potential are performed along with an estimate of the coupling of the double quantum dot to the microwave resonator. Prototype devices are fabricated and characterized by transport measurements of electron confinement and reflectometry measurements of the microwave resonator.},
doi = {10.1063/1.4890835},
journal = {Journal of Applied Physics},
number = 4,
volume = 116,
place = {United States},
year = {Mon Jul 28 00:00:00 EDT 2014},
month = {Mon Jul 28 00:00:00 EDT 2014}
}