A prototype silicon double quantum dot with dispersive microwave readout
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
- Department of Physics, University of California, Berkeley, California 94720 (United States)
- Department of Chemistry, University of California, Berkeley, California 94720 (United States)
- Accelerator and Fusion Research Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
We present a unique design and fabrication process for a lateral, gate-confined double quantum dot in an accumulation mode metal-oxide-semiconductor (MOS) structure coupled to an integrated microwave resonator. All electrostatic gates for the double quantum dot are contained in a single metal layer, and use of the MOS structure allows for control of the location of the two-dimensional electron gas via the location of the accumulation gates. Numerical simulations of the electrostatic confinement potential are performed along with an estimate of the coupling of the double quantum dot to the microwave resonator. Prototype devices are fabricated and characterized by transport measurements of electron confinement and reflectometry measurements of the microwave resonator.
- OSTI ID:
- 22308560
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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