skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Residual stress induced crystalline to amorphous phase transformation in Nb{sub 2}O{sub 5} quantum dots

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4890339· OSTI ID:22308513
;  [1];  [2]
  1. Thin Film Laboratory, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)
  2. Department of Physics and Electronics, Hans Raj College, University of Delhi, Delhi 110007 (India)

Nb{sub 2}O{sub 5} quantum dots (QDs) were grown using a simple technique of vacuum thermal evaporation. QDs were found to be crystalline in nature by selected area electron diffraction (SAED) in TEM. Samples with thickness up to 20 nm did not show any significant residual strain. Residual stress effect on band gap of crystalline Nb{sub 2}O{sub 5} was studied for films thicker than 20 nm. Residual strain was determined using SAED of the films with reference to powder X-ray diffraction (XRD). Films thicker than 45 nm become amorphous as analyzed by both SAED and XRD. The optical absorption of films in the range 25–60 nm indicates significantly varying optical band gap of films. The varying band gap with film thickness scales linearly very well with the variation of residual stress with film thickness. The residual stress dependence of band gap of crystalline films yields stress free band gap as 3.37 eV with pressure coefficient of band gap (∂E{sub g}/∂P){sub T} = −29.3 meV/GPa. From this study, the crystalline to amorphous transformation in tetragonal form of M-Nb{sub 2}O{sub 5} has been determined to be at about 14 GPa. Both pressure coefficient of band gap and crystalline to amorphous transition for tetragonal M-Nb{sub 2}O{sub 5} have been determined for the first time in the literature.

OSTI ID:
22308513
Journal Information:
Journal of Applied Physics, Vol. 116, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English