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Title: Residual stress induced crystalline to amorphous phase transformation in Nb{sub 2}O{sub 5} quantum dots

Abstract

Nb{sub 2}O{sub 5} quantum dots (QDs) were grown using a simple technique of vacuum thermal evaporation. QDs were found to be crystalline in nature by selected area electron diffraction (SAED) in TEM. Samples with thickness up to 20 nm did not show any significant residual strain. Residual stress effect on band gap of crystalline Nb{sub 2}O{sub 5} was studied for films thicker than 20 nm. Residual strain was determined using SAED of the films with reference to powder X-ray diffraction (XRD). Films thicker than 45 nm become amorphous as analyzed by both SAED and XRD. The optical absorption of films in the range 25–60 nm indicates significantly varying optical band gap of films. The varying band gap with film thickness scales linearly very well with the variation of residual stress with film thickness. The residual stress dependence of band gap of crystalline films yields stress free band gap as 3.37 eV with pressure coefficient of band gap (∂E{sub g}/∂P){sub T} = −29.3 meV/GPa. From this study, the crystalline to amorphous transformation in tetragonal form of M-Nb{sub 2}O{sub 5} has been determined to be at about 14 GPa. Both pressure coefficient of band gap and crystalline to amorphous transition for tetragonal M-Nb{sub 2}O{sub 5} have been determined for themore » first time in the literature.« less

Authors:
;  [1];  [2]
  1. Thin Film Laboratory, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)
  2. Department of Physics and Electronics, Hans Raj College, University of Delhi, Delhi 110007 (India)
Publication Date:
OSTI Identifier:
22308513
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; AMORPHOUS STATE; ELECTRON DIFFRACTION; EVAPORATION; FILMS; NIOBIUM OXIDES; PHASE TRANSFORMATIONS; POWDERS; PRESSURE COEFFICIENT; PRESSURE RANGE GIGA PA; QUANTUM DOTS; RESIDUAL STRESSES; STRAINS; TETRAGONAL LATTICES; THICKNESS; TRANSFORMATIONS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Dhawan, Sahil, Vedeshwar, Agnikumar G., and Dhawan, Tanuj, E-mail: tanuj-physics@yahoo.com. Residual stress induced crystalline to amorphous phase transformation in Nb{sub 2}O{sub 5} quantum dots. United States: N. p., 2014. Web. doi:10.1063/1.4890339.
Dhawan, Sahil, Vedeshwar, Agnikumar G., & Dhawan, Tanuj, E-mail: tanuj-physics@yahoo.com. Residual stress induced crystalline to amorphous phase transformation in Nb{sub 2}O{sub 5} quantum dots. United States. doi:10.1063/1.4890339.
Dhawan, Sahil, Vedeshwar, Agnikumar G., and Dhawan, Tanuj, E-mail: tanuj-physics@yahoo.com. 2014. "Residual stress induced crystalline to amorphous phase transformation in Nb{sub 2}O{sub 5} quantum dots". United States. doi:10.1063/1.4890339.
@article{osti_22308513,
title = {Residual stress induced crystalline to amorphous phase transformation in Nb{sub 2}O{sub 5} quantum dots},
author = {Dhawan, Sahil and Vedeshwar, Agnikumar G. and Dhawan, Tanuj, E-mail: tanuj-physics@yahoo.com},
abstractNote = {Nb{sub 2}O{sub 5} quantum dots (QDs) were grown using a simple technique of vacuum thermal evaporation. QDs were found to be crystalline in nature by selected area electron diffraction (SAED) in TEM. Samples with thickness up to 20 nm did not show any significant residual strain. Residual stress effect on band gap of crystalline Nb{sub 2}O{sub 5} was studied for films thicker than 20 nm. Residual strain was determined using SAED of the films with reference to powder X-ray diffraction (XRD). Films thicker than 45 nm become amorphous as analyzed by both SAED and XRD. The optical absorption of films in the range 25–60 nm indicates significantly varying optical band gap of films. The varying band gap with film thickness scales linearly very well with the variation of residual stress with film thickness. The residual stress dependence of band gap of crystalline films yields stress free band gap as 3.37 eV with pressure coefficient of band gap (∂E{sub g}/∂P){sub T} = −29.3 meV/GPa. From this study, the crystalline to amorphous transformation in tetragonal form of M-Nb{sub 2}O{sub 5} has been determined to be at about 14 GPa. Both pressure coefficient of band gap and crystalline to amorphous transition for tetragonal M-Nb{sub 2}O{sub 5} have been determined for the first time in the literature.},
doi = {10.1063/1.4890339},
journal = {Journal of Applied Physics},
number = 4,
volume = 116,
place = {United States},
year = 2014,
month = 7
}
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