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Title: Photoelectrochemical and photosensing behaviors of hydrothermally grown ZnO nanorods

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4890978· OSTI ID:22308498
; ; ;  [1]; ;  [2]
  1. Department of Electronics and Communication Engineering, National Institute of Technology, Agartala 799046 (India)
  2. Department of Physics, Indian Institute of Technology, Kharagpur 721302 (India)

ZnO nanorods have been grown on indium-tin-oxide coated glass substrates by a low cost chemical process. Current-voltage characteristics have been studied using ZnO nanorods as photoanode in an electrochemical cell. The flat band voltage shift and depletion width of ZnO nanorods/electrolyte interface have been estimated from Mott-Schottky (MS) characteristics. The electrochemical impedance measurements have been carried out to study the charge transport mechanism at the semiconductor-electrolyte interface under dark and white light (100 mW/cm{sup 2}) illumination. The doping concentration of nanorods has been extracted from MS plot. Photoresponse behavior of ZnO nanorods is found to be enhanced than seed layers with the incident of white light. Spectral dependent photovoltage of ZnO nanorods has been carried out using monochromatic light of wavelength 250–600 nm. The photopotential recovery time has been estimated for nanorods and seed layers. The stability of ZnO nanorods as a photoanode has been investigated.

OSTI ID:
22308498
Journal Information:
Journal of Applied Physics, Vol. 116, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English