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Title: Low-temperature ordering caused by exchange interaction in the Si:P impurity system near the insulator - Metal phase transition

Abstract

Behavior of the paramagnetic susceptibility in Si:P at low temperatures was investigated by Electron Spin Resonance in order to detect the antiferromagnetic and ferromagnetic ordering in the vicinity of the insulator-metal phase transition. A procedure was developed to operate sufficiently smooth changes of the spin density, by proton irradiated.

Authors:
; ; ; ;  [1];  [2]
  1. Ioffe Institute, St. Petersburg 194021, Russia and Institute of Crystal Growth, Berlin 12489 (Germany)
  2. Institute of Crystal Growth, Berlin 12489 (Germany)
Publication Date:
OSTI Identifier:
22308255
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1610; Journal Issue: 1; Conference: TIDS15: 15. international conference on transport in interacting disordered systems, Sant Feliu de Guixols (Spain), 1-5 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANTIFERROMAGNETISM; DENSITY; ELECTRON SPIN RESONANCE; EXCHANGE INTERACTIONS; IMPURITIES; IRRADIATION; METALS; PARAMAGNETISM; PHASE TRANSFORMATIONS; PROTONS; SPIN

Citation Formats

Semenikhin, P. V., Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I., and Abrosimov, N. V. Low-temperature ordering caused by exchange interaction in the Si:P impurity system near the insulator - Metal phase transition. United States: N. p., 2014. Web. doi:10.1063/1.4893522.
Semenikhin, P. V., Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I., & Abrosimov, N. V. Low-temperature ordering caused by exchange interaction in the Si:P impurity system near the insulator - Metal phase transition. United States. doi:10.1063/1.4893522.
Semenikhin, P. V., Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I., and Abrosimov, N. V. Wed . "Low-temperature ordering caused by exchange interaction in the Si:P impurity system near the insulator - Metal phase transition". United States. doi:10.1063/1.4893522.
@article{osti_22308255,
title = {Low-temperature ordering caused by exchange interaction in the Si:P impurity system near the insulator - Metal phase transition},
author = {Semenikhin, P. V. and Veinger, A. I. and Zabrodskii, A. G. and Tisnek, T. V. and Goloshchapov, S. I. and Abrosimov, N. V.},
abstractNote = {Behavior of the paramagnetic susceptibility in Si:P at low temperatures was investigated by Electron Spin Resonance in order to detect the antiferromagnetic and ferromagnetic ordering in the vicinity of the insulator-metal phase transition. A procedure was developed to operate sufficiently smooth changes of the spin density, by proton irradiated.},
doi = {10.1063/1.4893522},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1610,
place = {United States},
year = {Wed Aug 20 00:00:00 EDT 2014},
month = {Wed Aug 20 00:00:00 EDT 2014}
}
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