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Title: Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

Abstract

A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

Authors:
; ; ; ;  [1]
  1. Ioffe Institute of the Russian Academy of Sciences, St. Petersburg (Russian Federation)
Publication Date:
OSTI Identifier:
22308253
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1610; Journal Issue: 1; Conference: TIDS15: 15. international conference on transport in interacting disordered systems, Sant Feliu de Guixols (Spain), 1-5 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ARSENIC; DOPED MATERIALS; ELECTRON SPIN RESONANCE; LAYERS; MAGNETIC SUSCEPTIBILITY; SEMICONDUCTOR MATERIALS

Citation Formats

Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I., and Semenikhin, P. V. Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance. United States: N. p., 2014. Web. doi:10.1063/1.4893521.
Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I., & Semenikhin, P. V. Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance. United States. doi:10.1063/1.4893521.
Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I., and Semenikhin, P. V. Wed . "Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance". United States. doi:10.1063/1.4893521.
@article{osti_22308253,
title = {Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance},
author = {Veinger, A. I. and Zabrodskii, A. G. and Tisnek, T. V. and Goloshchapov, S. I. and Semenikhin, P. V.},
abstractNote = {A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.},
doi = {10.1063/1.4893521},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1610,
place = {United States},
year = {Wed Aug 20 00:00:00 EDT 2014},
month = {Wed Aug 20 00:00:00 EDT 2014}
}