skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

Abstract

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.

Authors:
; ; ; ; ; ; ;  [1];  [2]
  1. Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026 (China)
  2. Department of Physics and Astronomy, University of California, Los Angeles, California 90095 (United States)
Publication Date:
OSTI Identifier:
22308218
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; COUPLING; ELECTRIC POTENTIAL; EQUIPMENT; EVALUATION; FLUCTUATIONS; GALLIUM ARSENIDES; NANOELECTRONICS; NANOFLUIDS; NANOTECHNOLOGY; QUANTUM DOTS; RESOURCE EXPLOITATION; SEMICONDUCTOR MATERIALS; SENSORS; STABILITY

Citation Formats

Li, Hai-Ou, Cao, Gang, Xiao, Ming, You, Jie, Wei, Da, Tu, Tao, Guo, Guang-Can, Guo, Guo-Ping, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, and Jiang, Hong-Wen. Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device. United States: N. p., 2014. Web. doi:10.1063/1.4900915.
Li, Hai-Ou, Cao, Gang, Xiao, Ming, You, Jie, Wei, Da, Tu, Tao, Guo, Guang-Can, Guo, Guo-Ping, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, & Jiang, Hong-Wen. Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device. United States. https://doi.org/10.1063/1.4900915
Li, Hai-Ou, Cao, Gang, Xiao, Ming, You, Jie, Wei, Da, Tu, Tao, Guo, Guang-Can, Guo, Guo-Ping, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, and Jiang, Hong-Wen. Fri . "Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device". United States. https://doi.org/10.1063/1.4900915.
@article{osti_22308218,
title = {Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device},
author = {Li, Hai-Ou and Cao, Gang and Xiao, Ming and You, Jie and Wei, Da and Tu, Tao and Guo, Guang-Can and Guo, Guo-Ping and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 and Jiang, Hong-Wen},
abstractNote = {We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.},
doi = {10.1063/1.4900915},
url = {https://www.osti.gov/biblio/22308218}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 116,
place = {United States},
year = {2014},
month = {11}
}