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Title: Experimental determination of band offsets of NiO-based thin film heterojunctions

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4900737· OSTI ID:22308133
;  [1];  [2]
  1. Faculty of Science and Technology/Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)
  2. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980–8577 (Japan)

The energy band diagrams of NiO-based solar cell structures that use various n-type oxide semiconductors such as ZnO, Mg{sub 0.3}Zn{sub 0.7}O, Zn{sub 0.5}Sn{sub 0.5}O, In{sub 2}O{sub 3}:Sn (ITO), SnO{sub 2}, and TiO{sub 2} were evaluated by photoelectron yield spectroscopy. The valence band discontinuities were estimated to be 1.6 eV for ZnO/NiO and Mg{sub 0.3}Zn{sub 0.7}O/NiO, 1.7 eV for Zn{sub 0.5}Sn{sub 0.5}O/NiO and ITO/NiO, and 1.8 eV for SnO{sub 2}/NiO and TiO{sub 2}/NiO heterojunctions. By using the valence band discontinuity values and corresponding energy bandgaps of the layers, energy band diagrams were developed. Judging from the band diagram, an appropriate solar cell consisting of p-type NiO and n-type ZnO layers was deposited on ITO, and a slight but noticeable photovoltaic effect was obtained with an open circuit voltage (V{sub oc}) of 0.96 V, short circuit current density (J{sub sc}) of 2.2 μA/cm{sup 2}, and fill factor of 0.44.

OSTI ID:
22308133
Journal Information:
Journal of Applied Physics, Vol. 116, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English