Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films
- Department of Physics, GITAM Institute of Technology, GITAM University, Visakhapatnam - 530 045, A.P. (India)
- Department of Physics, Sri Krishnadevaraya University, Anantapuramu - 515 003, A.P. (India)
Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.
- OSTI ID:
- 22308000
- Journal Information:
- AIP Conference Proceedings, Vol. 1620, Issue 1; Conference: Optics 14: International conference on optics: Light and its interactions with matter, Calicut, Kerala (India), 19-21 Mar 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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