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Title: Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure

Abstract

The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}~55 μC/cm² obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290 K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ~123 emu/cm³. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.

Authors:
;  [1];  [2]
  1. Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand (India)
  2. Functional Materials Division, Solid State Physics Lab (SSPL), DRDO, Lucknow Road, Timarpur, Delhi 110054 (India)
Publication Date:
OSTI Identifier:
22306007
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FERROELECTRIC MATERIALS; INDIUM; MAGNETIC PROPERTIES; MAGNETIZATION; MANGANESE; MARTENSITIC STEELS; NICKEL; PERMITTIVITY; PHASE TRANSFORMATIONS; PZT; SILICON; STRESSES; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSITION TEMPERATURE; X-RAY DIFFRACTION

Citation Formats

Singh, Kirandeep, Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in, and Singh, Sushil Kumar. Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure. United States: N. p., 2014. Web. doi:10.1063/1.4895838.
Singh, Kirandeep, Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in, & Singh, Sushil Kumar. Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure. United States. doi:10.1063/1.4895838.
Singh, Kirandeep, Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in, and Singh, Sushil Kumar. Sun . "Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure". United States. doi:10.1063/1.4895838.
@article{osti_22306007,
title = {Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure},
author = {Singh, Kirandeep and Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in and Singh, Sushil Kumar},
abstractNote = {The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}~55 μC/cm² obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290 K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ~123 emu/cm³. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.},
doi = {10.1063/1.4895838},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 116,
place = {United States},
year = {2014},
month = {9}
}