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Title: High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer

Abstract

We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94 eV and 2.19 eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3 V higher than those of GaAs:Mn excited by hot holes in reserve biased p⁺-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ~700 K for a low input electrical power density of 0.4 W/cm², while the lattice temperature of the GaAs:Mn layer can be kept at 340 K.

Authors:
 [1];  [2]; ; ;  [1];  [2]
  1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22306002
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; DOPED MATERIALS; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRON TEMPERATURE; EV RANGE; GALLIUM ARSENIDES; HOLES; LAYERS; MANGANESE ADDITIONS; POWER DENSITY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SPECTRA; TEMPERATURE RANGE 0273-0400 K; TUNNEL DIODES; TUNNEL EFFECT; VISIBLE RADIATION

Citation Formats

Hai, Pham Nam, Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-0033, Yatsui, Takashi, Ohtsu, Motoichi, Tanaka, Masaaki, and Nanophotonics Research Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656. High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer. United States: N. p., 2014. Web. doi:10.1063/1.4895700.
Hai, Pham Nam, Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-0033, Yatsui, Takashi, Ohtsu, Motoichi, Tanaka, Masaaki, & Nanophotonics Research Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656. High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer. United States. doi:10.1063/1.4895700.
Hai, Pham Nam, Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-0033, Yatsui, Takashi, Ohtsu, Motoichi, Tanaka, Masaaki, and Nanophotonics Research Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656. Sun . "High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer". United States. doi:10.1063/1.4895700.
@article{osti_22306002,
title = {High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer},
author = {Hai, Pham Nam and Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-0033 and Yatsui, Takashi and Ohtsu, Motoichi and Tanaka, Masaaki and Nanophotonics Research Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656},
abstractNote = {We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94 eV and 2.19 eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3 V higher than those of GaAs:Mn excited by hot holes in reserve biased p⁺-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ~700 K for a low input electrical power density of 0.4 W/cm², while the lattice temperature of the GaAs:Mn layer can be kept at 340 K.},
doi = {10.1063/1.4895700},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 116,
place = {United States},
year = {2014},
month = {9}
}