skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thermoelectric characteristic of the rough InN/GaN core-shell nanowires

Abstract

An analysis to model the thermoelectric (TE) effects of the rough InN/GaN core-shell nanowires (NWs) with wire diameter ranging from 25 nm to 100 nm is proposed. The elastic continuum model is employed to calculate the phonon dispersion relation curves and the related phonon group velocity. Within the framework of Boltzmann transport equations and relaxation time approximation, the electrical conductivity, Seebeck coefficient, electronic thermal conductivity, and the lattice thermal conductivity is obtained. Simulation results indicate that TE properties of the rough InN/GaN core-shell NWs are strongly affected by the surface roughness and the diameter of NWs. The optimized condition of the proposed rough InN/GaN core-shell TE NWs is studied in this paper and the highest ZT obtained in the calculation is 0.8598 at 300 K and 1.713 at 1000 K.

Authors:
;  [1]
  1. Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
Publication Date:
OSTI Identifier:
22305952
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; BOLTZMANN EQUATION; DISPERSION RELATIONS; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDES; INDIUM NITRIDES; NANOWIRES; PHONONS; QUANTUM WIRES; RELAXATION TIME; ROUGHNESS; SIMULATION; SURFACES; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES

Citation Formats

Wu, Chao-Wei, and Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw. Thermoelectric characteristic of the rough InN/GaN core-shell nanowires. United States: N. p., 2014. Web. doi:10.1063/1.4894510.
Wu, Chao-Wei, & Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw. Thermoelectric characteristic of the rough InN/GaN core-shell nanowires. United States. doi:10.1063/1.4894510.
Wu, Chao-Wei, and Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw. Sun . "Thermoelectric characteristic of the rough InN/GaN core-shell nanowires". United States. doi:10.1063/1.4894510.
@article{osti_22305952,
title = {Thermoelectric characteristic of the rough InN/GaN core-shell nanowires},
author = {Wu, Chao-Wei and Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw},
abstractNote = {An analysis to model the thermoelectric (TE) effects of the rough InN/GaN core-shell nanowires (NWs) with wire diameter ranging from 25 nm to 100 nm is proposed. The elastic continuum model is employed to calculate the phonon dispersion relation curves and the related phonon group velocity. Within the framework of Boltzmann transport equations and relaxation time approximation, the electrical conductivity, Seebeck coefficient, electronic thermal conductivity, and the lattice thermal conductivity is obtained. Simulation results indicate that TE properties of the rough InN/GaN core-shell NWs are strongly affected by the surface roughness and the diameter of NWs. The optimized condition of the proposed rough InN/GaN core-shell TE NWs is studied in this paper and the highest ZT obtained in the calculation is 0.8598 at 300 K and 1.713 at 1000 K.},
doi = {10.1063/1.4894510},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 116,
place = {United States},
year = {2014},
month = {9}
}