Comparative study of polar and semipolar (112⁻2) InGaN layers grown by metalorganic vapour phase epitaxy
- Tyndall National Institute, University College Cork, Lee Matltings, Dyke Parade, Cork (Ireland)
- Department of Materials Science and Metallurgy University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)
- Institute of Optoelectronics, Ulm University, Ulm 89069 (Germany)
InGaN layers were grown simultaneously on (112⁻2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750°C), the indium content (<15%) of the (112⁻2) and (0001) InGaN layers was similar. However, for temperatures less than 750°C, the indium content of the (112⁻2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112⁻2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112⁻2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112⁻2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.
- OSTI ID:
- 22305817
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
Similar Records
High Efficiency InGaN LEDs Emitting in Green, Amber and Beyond (Final Report)
Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy