High temperature dielectric relaxation anomaly of Y³⁺ and Mn²⁺ doped barium strontium titanate ceramics

Journal Article · Tue Oct 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4896548· OSTI ID:22305796

Yan, Shiguang; Mao, Chaoliang; Wang, Genshui; Yao, Chunhua; Cao, Fei; Dong, Xianlin ^[1]

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1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

Relaxation like dielectric anomaly is observed in Y³⁺ and Mn²⁺ doped barium strontium titanate ceramics when the temperature is over 450 K. Apart from the conventional dielectric relaxation analysis method with Debye or modified Debye equations, which is hard to give exact temperature dependence of the relaxation process, dielectric response in the form of complex impedance, assisted with Cole-Cole impedance model corrected equivalent circuits, is adopted to solve this problem and chase the polarization mechanism in this paper. Through this method, an excellent description to temperature dependence of the dielectric relaxation anomaly and its dominated factors are achieved. Further analysis reveals that the exponential decay of the Cole distribution parameter n with temperature is confirmed to be induced by the microscopic lattice distortion due to ions doping and the interaction between the defects. At last, a clear sight to polarization mechanism containing both the intrinsic dipolar polarization and extrinsic distributed oxygen vacancies hopping response under different temperature is obtained.

• OSTI ID: 22305796
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BARIUM COMPOUNDS
CERAMICS
DIELECTRIC MATERIALS
DISTRIBUTION
DOPED MATERIALS
EQUIVALENT CIRCUITS
IMPEDANCE
INTERACTIONS
MANGANESE ADDITIONS
OXYGEN
POLARIZATION
RELAXATION
SIMULATION
STRONTIUM COMPOUNDS
TEMPERATURE DEPENDENCE
TITANATES
VACANCIES
YTTRIUM ADDITIONS