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Title: On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Abstract

It is commonly accepted that interface states at the passivation surface of AlGaN/GaN heterostructures play an important role in the formation of the 2DEG density. Several interface state models are cited throughout literature, some with discrete levels, others with different kinds of distributions, or a combination of both. The purpose of this article is to compare the existing interface state models with both direct and indirect measurements of these interface states from literature (e.g., through the hysteresis of transfer characteristics of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) employing such an interface in the gate region) and Technology Computer Aided Design (TCAD) simulations of 2DEG densities as a function of the AlGaN thickness. The discrepancies between those measurements and TCAD simulations (also those commonly found in literature) are discussed. Then, an alternative model inspired by the Disorder Induced Gap State model for compound semiconductors is proposed. It is shown that defining a deep border trap inside the insulator can solve these discrepancies and that this alternative model can explain the origin of the two dimensional electron gas in combination with a high-quality interface that, by definition, has a low interface state density.

Authors:
; ; ; ; ;  [1]; ;  [1]
  1. imec, Kapeldreef 75, 3001 Leuven (Belgium)
Publication Date:
OSTI Identifier:
22305773
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; DISTRIBUTION; ELECTRON GAS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; HETEROJUNCTIONS; HYSTERESIS; INTERFACES; METALS; MOSFET; PASSIVATION; SEMICONDUCTOR MATERIALS; SIMULATION; SURFACES; THICKNESS; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Bakeroot, B., E-mail: Benoit.Bakeroot@elis.ugent.be, You, S., Van Hove, M., De Jaeger, B., Geens, K., Stoffels, S., Decoutere, S., Wu, T. -L., Hu, J., and Department of Electrical Engineering, KU Leuven, 3001 Leuven. On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors. United States: N. p., 2014. Web. doi:10.1063/1.4896900.
Bakeroot, B., E-mail: Benoit.Bakeroot@elis.ugent.be, You, S., Van Hove, M., De Jaeger, B., Geens, K., Stoffels, S., Decoutere, S., Wu, T. -L., Hu, J., & Department of Electrical Engineering, KU Leuven, 3001 Leuven. On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors. United States. https://doi.org/10.1063/1.4896900
Bakeroot, B., E-mail: Benoit.Bakeroot@elis.ugent.be, You, S., Van Hove, M., De Jaeger, B., Geens, K., Stoffels, S., Decoutere, S., Wu, T. -L., Hu, J., and Department of Electrical Engineering, KU Leuven, 3001 Leuven. 2014. "On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors". United States. https://doi.org/10.1063/1.4896900.
@article{osti_22305773,
title = {On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors},
author = {Bakeroot, B., E-mail: Benoit.Bakeroot@elis.ugent.be and You, S. and Van Hove, M. and De Jaeger, B. and Geens, K. and Stoffels, S. and Decoutere, S. and Wu, T. -L. and Hu, J. and Department of Electrical Engineering, KU Leuven, 3001 Leuven},
abstractNote = {It is commonly accepted that interface states at the passivation surface of AlGaN/GaN heterostructures play an important role in the formation of the 2DEG density. Several interface state models are cited throughout literature, some with discrete levels, others with different kinds of distributions, or a combination of both. The purpose of this article is to compare the existing interface state models with both direct and indirect measurements of these interface states from literature (e.g., through the hysteresis of transfer characteristics of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) employing such an interface in the gate region) and Technology Computer Aided Design (TCAD) simulations of 2DEG densities as a function of the AlGaN thickness. The discrepancies between those measurements and TCAD simulations (also those commonly found in literature) are discussed. Then, an alternative model inspired by the Disorder Induced Gap State model for compound semiconductors is proposed. It is shown that defining a deep border trap inside the insulator can solve these discrepancies and that this alternative model can explain the origin of the two dimensional electron gas in combination with a high-quality interface that, by definition, has a low interface state density.},
doi = {10.1063/1.4896900},
url = {https://www.osti.gov/biblio/22305773}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 13,
volume = 116,
place = {United States},
year = {2014},
month = {10}
}