Investigation of interfaces in AlSb/InAs/Ga₀.₇₁In₀.₂₉Sb quantum wells by photoluminescence

Journal Article · Sun Sep 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4896553· OSTI ID:22305689

Junliang, Xing; Yu, Zhang; Yongping, Liao; Juan, Wang; Wei, Xiang; Hongyue, Hao; Yingqiang, Xu; Zhichuan, Niu ^[1]

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1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)

We have investigated excitation power and temperature dependent PL spectra to systematically study the influences of the interfaces in the both InAs/Ga₀.₇₁In₀.₂₉Sb and InAs/AlSb on the optical properties of AlSb/Ga₀.₇₁In₀.₂₉Sb/InAs quantum wells (QWs). The localized states as well as the activation energy were analyzed to discuss the possible thermal quenching and non-radiative recombination mechanisms. We found two non-radiative recombination processes were involved in the thermal quenching of radiative emission for the QW structures. The GaAs-like interface in InAs/Ga₀.₇₁In₀.₂₉Sb with higher activation energy (62.7 meV) in high temperature region (70 K–300 K) supplies a deeper hole confinement and less roughness than the InSb-like one, which suppress non-radiative recombination process and promote the optical qualities of the quantum wells. The peak energy of the InSb-like sample exhibited “step-curve” behavior with increase temperature. Neither InSb-like nor AlAs-like interface in InAs/AlSb favored the radiative emission efficiency.

• OSTI ID: 22305689
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONIDES
CONFINEMENT
EFFICIENCY
EXCITATION
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INTERFACES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WELLS
QUENCHING
RECOMBINATION
ROUGHNESS
SPECTRA
TEMPERATURE DEPENDENCE