Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content
- Semiconductor Physics Department and Institute of Applied Research, Vilnius University, Sauletekio 9-III, LT-10222 Vilnius (Lithuania)
- AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany)
The trench defects in InGaN/GaN multiple quantum well structures are studied using confocal photoluminescence (PL) spectroscopy and atomic force microscopy. A strong blueshift (up to ∼280 meV) and an intensity increase (by up to a factor of 700) of the emission are demonstrated for regions enclosed by trench loops. The influence of the difference in the well width inside and outside the trench loops observed by transmission electron microscopy, the compositional pulling effect, the strain relaxation inside the loop, and corresponding reduction in the built-in field on the PL band peak position and intensity were estimated. The competition of these effects is mainly governed by the width of the quantum wells in the structure. It is shown that the PL band blueshift observed within the trench defect loops in the InGaN structures with wide quantum wells is mainly caused by the reduction in efficiency of the quantum-confined Stark effect due to strain relaxation.
- OSTI ID:
- 22304515
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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